C04B2237/126

METHOD FOR MANUFACTURING BONDED BODY AND METHOD FOR MANUFACTURING INSULATION CIRCUIT SUBSTRATE

When a laminate of a plurality of different materials including a metal plate is bonded in a pressurized and heated state, a first pressurizing member in which a first metal foil/a carbon sheet or a ceramic sheet/a graphite sheet are laminated in this order is arranged so that the first metal foil is in contact with a surface of the first metal plate of the laminate, the first metal foil is made of a material that does not react at a contact surface of the first plate member and the first metal foil when heating, and a product of a Young's modulus (GPa) and a thickness (mm) of the first metal foil is 0.6 or more and 100 or less, so that a good bonded body can be manufactured by evenly pressurizing the laminate and foreign substances can be restrained from adhering to the surface of the laminate.

Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

NUCLEAR REACTOR FUEL ROD AND FUEL ASSEMBLY HAVING BUNDLED SAME

A nuclear reactor fuel rod is a fuel rod for a light-water reactor. The nuclear reactor fuel rod includes a fuel cladding tube and an end plug, both of which are formed of a silicon carbide material. A bonding portion between the fuel cladding tube and the end plug is formed by brazing with a predetermined metal bonding material interposed, and/or by diffusion bonding. The predetermined metal bonding material has a solidus temperature of 1200° C. or higher. An outer surface of the bonding portion, and a portion of an outer surface of the fuel cladding tube and the end plug, which is adjacent to the outer surface of the bonding portion are covered by bonding-portion coating formed of a predetermined coating metal. The predetermined metal bonding material and the predetermined coating metal have an average linear expansion coefficient which is less than 10 ppm/K.

Method of joining metal-ceramic substrates to metal bodies
09790130 · 2017-10-17 · ·

A method of joining a metal-ceramic substrate having metallization on at least one side to a metal body by using metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module

To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-μm equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder≧active metal hydride powder>Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 μm, d50 of 10 to 35 μm, and d90 of 30 to 50 μm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.

POWER MODULE SUBSTRATE AND POWER MODULE
20220037226 · 2022-02-03 · ·

A power module substrate 10 is provided with: an insulating substrate 1; and a metal sheet 2 that is joined to the insulating substrate 1 via a brazing material 3, wherein regarding the surface roughness, in the thickness direction, of the lateral surface of the metal sheet 2, the surface roughness of a corner 2a farthest from the center of the metal sheet 2 is larger than the surface roughness of plane parts 2b, which bound the corner, in at least a plan view. Also provided is a power module 100 which is formed by mounting an electronic component 40 on this power module substrate 10.

Apparatus and method for producing (metal plate)-(ceramic board) laminated assembly, and apparatus and method for producing power-module substrate

Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.

Ceramic pressure measuring cell and method for its manufacture

A method for manufacturing a pressure measuring cell, which has a ceramic platform and a ceramic measuring membrane, wherein the measuring membrane is joined with the platform pressure tightly by an active hard solder, or braze, wherein the method includes: providing the platform, the measuring membrane and the active hard solder, or braze, positioning the active hard solder, or braze, between the platform and the measuring membrane; melting the active hard solder, or braze, by irradiating the active hard solder, or braze, by a laser, wherein the irradiating of the active hard solder, or braze, occurs through the measuring membrane; and letting the active hard solder, or braze, solidify by cooling.

BONDED SUBSTRATE AND METHOD FOR MANUFACTURING BONDED SUBSTRATE

Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.