Patent classifications
C04B2237/34
(Ga) Zn Sn oxide sputtering target
A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.
MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.
APPLYING SILICON METAL-CONTAINING BOND LAYER TO CERAMIC OR CERAMIC MATRIX COMPOSITE SUBSTRATES
In some examples, a method may include depositing, from a slurry comprising particles including silicon metal, a bond coat precursor layer including the particles comprising silicon metal directly on a ceramic matrix composite substrate. The method also may include locally heating the bond coat precursor layer to form a bond coat comprising silicon metal. Additionally, the method may include forming a protective coating on the bond coat. In some examples, an article may include a ceramic matrix composite substrate, a bond coat directly on the substrate, and a protective coating on the bond coat. The bond coat may include silicon metal and a metal comprising at least one of Zr, Y, Yb, Hf, Ti, Al, Cr, Mo, Nb, Ta, or a rare earth metal.
THERMALLY CONDUCTIVE AND ELECTRICALLY INSULATING SUBSTRATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A thermally conductive and electrically insulating substrate structure and a method for manufacturing the same are provided. The thermally conductive and electrically insulating substrate structure includes an insulating layer, a plurality of metal layers and a plurality of function layers. The plurality of metal layers and the plurality of function layers are disposed on the insulating layer. A sidewall of the metal layer is in contact with a corresponding one of the function layers, and two of the function layers between any two adjacent ones of the metal layers are not in contact with each other.
POROUS CERAMIC LAMINATE AND METHOD FOR PRODUCING SAME
A porous ceramic laminate, which can reduce pressure loss of a fluid, includes a first porous layer and a second porous layer. The second porous layer is laminated on, in contact with or via air, the first porous layer. A part of the second porous layer is laminated on, in contact with, the first porous layer. Each of the first porous layer and the second porous layer contains a metal oxide. A ratio Da/Db of an average pore diameter Da of the first porous layer relative to an average pore diameter Db of the second porous layer is 10 or more. A proportion of a portion in which a distance between the first porous layer and the second porous layer is smaller than 1 μm is 70% or less.
METHOD FOR MANUFACTURING CERAMIC HEATER
The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.
Light absorbing member, member for hydrogen production, and hydrogen production apparatus
A light absorbing member includes a ceramic composite having a plurality of first ceramic particles exhibiting positive resistance temperature characteristics in a first ceramics having an open porosity of 5% or lower.
Cordierite-based sintered body, method for producing the same, and composite substrate
A cordierite-based sintered body according to the present invention contains cordierite as a main component and silicon nitride or silicon carbide. The cordierite-based sintered body preferably has a thermal expansion coefficient less than 2.4 ppm/° C. at 40° C. to 400° C., an open porosity of 0.5% or less, and an average grain size of 1 μm or less.
Forming a surface layer of a ceramic matrix composite article
The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.
GAS PLUG, ELECTROSTATIC ATTRACTION MEMBER, AND PLASMA TREATMENT DEVICE
A gas plug of the present disclosure is composed of a columnar porous composite in which a plurality of silicon compound phases containing silicon carbide as a main component are connected to each other via a silicon phase having silicon as a main component. The porous composite is housed inside a tubular body made from a dense ceramic.