A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A method for the layered production of a green body (10) from powdery material, including insert elements which are placed at defined positions in the powdery material, in which the green body (10) is segmented in a building direction (16) into N, N≥2 consecutive, cylindrical cross-sectional areas (11, 12, 13, 14, 15) made up of a two-dimensional cross-sectional surface and a layer thickness. Setting areas for the insert elements are defined in the cross-sectional areas of the green body (10) which include the defined positions for the insert elements, and loose powder particles surrounding the setting elements are at least partially bonded to each other before the insert elements are placed into the powdery material.

A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

A vacuum additive manufacturing process enabling obtaining, through a single-step process, the synthesis, controlled densification and shaping of non-oxide materials as well as composite materials containing non-oxide as matrices or reinforcements, in porous as well as fully dense ceramic components, with a tailored nano-micro-macrostructure.

A method for forming a self-healing ceramic matrix composite (CMC) component includes depositing a first self-healing particulate material in a first region of a CMC preform of the CMC component and depositing a second self-healing particulate material having a different chemical composition than the first self-healing particulate material in a second region of the CMC preform distinct from the first region.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.

According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.

In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

A method of pressure sintering an environmental barrier coating on a surface of a ceramic substrate to form an article includes the steps of etching the surface of the ceramic substrate to texture the surface, disposing an environmental barrier coating on the etched surface of the ceramic substrate wherein the environmental barrier coating includes a rare earth silicate, and pressure sintering the environmental barrier coating on the etched surface of the ceramic substrate in an inert or nitrogen atmosphere at a pressure of greater than atmospheric pressure such that at least a portion of the environmental barrier coating is disposed in the texture of the surface of the ceramic substrate thereby forming the article.