C04B2237/402

Method of manufacturing insulating circuit board with heatsink

What is provided is a method of manufacturing an insulating circuit board with a heatsink including an insulating circuit board and a heatsink, the heatsink being bonded to the metal layer side of the insulating circuit board, the metal layer being formed of aluminum, and a bonding surface of the heatsink with the insulating circuit board being formed of an aluminum alloy having a solidus temperature of 650° C. or lower. This method includes a high alloy element concentration portion forming step (S02) of forming a high alloy element concentration portion and a heatsink bonding step (S03) of bonding the heatsink, in which a ratio tb/ta of a thickness tb of the brazing material layer to a thickness to of the core material in the clad material is in a range of 0.1 to 0.3.

Joining Method
20220169575 · 2022-06-02 ·

A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.

JOINT BODY AND LIGHT SOURCE DEVICE

A joint body of the present disclosure includes a substrate including a base member having insulating properties and a metal layer positioned on a first main surface of the base member, a metal joint layer, and a metal member. The metal joint layer is positioned between the metal layer and the metal member of the substrate. The metal joint layer includes a nickel layer, a solder layer, and a composite layer containing a mix of nickel and solder. The nickel layer, the composite layer, and the solder layer are positioned in this order from the metal layer side to the metal member side. The nickel in the composite layer extends from the nickel layer in the thickness direction and forms protrusions and recesses.

Method for producing insulating circuit substrate with heat sink

A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

HIGH OPTICAL POWER LIGHT CONVERSION DEVICE USING A PHOSPHOR ELEMENT WITH SOLDER ATTACHMENT

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

Aluminum nitride sintered body, method of making the same, and semiconductor manufacturing equipment component using aluminum nitride sintered body
11325866 · 2022-05-10 · ·

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

HIGH OPTICAL POWER LIGHT CONVERSION DEVICE USING A PHOSPHOR ELEMENT WITH SOLDER ATTACHMENT

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

LOW THERMAL EXPANSION FILM ADHESIVES FOR MULTILAYER TRANSPARENT ARMOUR AND RELATED APPLICATIONS

The present disclosure is directed to a composite material comprising a thermoplastic adhesive and nanotubes oriented in the in-plane orientation. In additional aspects, the disclosure includes a laminated armor material comprising the composite and armor materials.

Methods of three-dimensional electrophoretic deposition for ceramic and cermet applications and systems thereof

A method for forming a ceramic according to one embodiment includes electrophoretically depositing a plurality of layers of particles of a non-cubic material. The particles of the deposited non-cubic material are oriented in a common direction.

METHOD FOR MANUFACTURING CIRCUIT BOARD INCLUDING METAL-CONTAINING LAYER
20220132676 · 2022-04-28 ·

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).