A method for fabricating a composite component for horology or jewellery including making a base from a first material, with a first visible apparent surface, and a first support surface; a structure from a second ceramic, or sapphire or at least partially amorphous material, with a second apparent surface and a second support surface, including a through bore machined over the entire thickness thereof; at least one insert made of a third material, for each through bore, and arranged to fit together in a complementary manner with this through bore; bonding this base and each structure to each other, with each first support surface and each second complementary support surface bearing against one another; securing each insert with its respective through bore.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

A copper/ceramic bonded body of the present invention is formed by bonding a copper member, which is formed of copper or a copper alloy, and a ceramic member, in which a ratio D1/D0 is 0.60 or less, D0 being an average crystal grain size of the entire copper member, D1 being an average crystal grain size of the copper member at a position 50 μm from a bonding surface with the ceramic member, D0 and D1 being obtained by observing a cross-section of the copper member along a laminating direction.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

To provide a method of manufacturing power module substrate board at high productivity and a ceramic-copper bonded body in which warps are reduced. In a bonded body-forming step, a circuit layer-forming copper layer consisting of a plurality of first copper layers is formed by arranging and bonding a plurality of first copper boards on a first surface of a ceramic board, and a metal layer-forming copper layer consisting of a second copper layer with a smaller arrangement number than that of the first copper layers is formed by bonding a second copper board having a larger planar area than that of the first copper board and a smaller thickness than that of the first copper board so as to cover at least two of adjacent substrate board-forming areas on a second surface of the ceramic board among the substrate board-forming areas partitioned by the dividing groove.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.

The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t.sub.1 of the circuit layer and a thickness t.sub.2 of the second aluminum layer of the metal layer satisfy t.sub.1<t.sub.2.