A method of fabricating a curved surface bonding technique using low melting temperature nanoparticles or nanofilms/nanoparticles of reactive metals as eutectic compounds. The ability of nanomaterials to melt at low temperature lowers the bonding temperature and reduces/eliminates the residual stresses generated in bulk material during the bonding process of two materials with different coefficients of thermal expansion. The nanoscale materials will then be integrated and the new bond will assume properties of the bulk material, including its higher melting temperature.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment a multilayer component includes a ceramic main element and at least one metal structure, wherein the metal structure is cosintered and wherein main element is a varistor ceramic having 90 mol % of ZnO, from 0.5 to 5 mol % of Sb.sub.2O.sub.3, from 0.05 to 2 mol % of Co.sub.3O.sub.4, Mn.sub.2O.sub.3, SiO.sub.2 and/or Cr.sub.2O.sub.3, and <0.1 mol % of B.sub.2O.sub.3, Al.sub.2O.sub.3 and/or NiO.

A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A method for producing a joined solid, the method comprising placing a metal powder on a solid; covering at least a portion of the periphery of the metal powder with a high-melting-point material having a melting point higher than the melting point of the metal powder; and irradiating the metal powder, at least a portion of the periphery of which is covered with the high-melting-point material, with microwaves to heat the metal powder, thereby sintering or melt-solidifying the metal powder to form a metal solid on the solid.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

A multilayer transparent conductive film is provided, including: a Ag film that is formed of Ag or a Ag alloy; and a transparent conductive oxide film that is disposed on two opposite surfaces of the Ag film, in which the transparent conductive oxide film is formed of an oxide including Zn, Ga, and Ti.

A method of brazing a sintered zirconia ceramic body, comprises: providing a sintered zirconia ceramic body having a surface; chemically reducing the sintered zirconia ceramic body in whole or in part to form a reduced surface to the sintered zirconia ceramic body; applying a brazing material to at least part of the reduced surface to form an assembly comprising said brazing material and sintered zirconia ceramic body; heating said assembly to a temperature sufficient to at least partially melt the brazing material such that the brazing material wets the reduced surface; and cooling the assembly to solidify the brazing material.

An improved method for embedding one or more sensors in SiC is provided. The method includes depositing a binder onto successive layers of a SiC powder feedstock to produce a dimensionally stable green body have a true-sized cavity. A sensor component is then press-fit into the true-sized cavity. Alternatively, the green body is printed around the sensor component. The assembly (the green body and the sensor component) is heated within a chemical vapor infiltration (CVI) chamber for debinding, and a precursor gas is introduced for densifying the SiC matrix material. During infiltration, the sensor component becomes bonded to the densified SiC matrix, the sensor component being selected to be thermodynamically compatible with CVI byproducts at elevated temperatures, including temperatures in excess of 1000? C.

Disclosed herein are electrically conductive and hermetic vias disposed within an insulator substrate of a feedthrough assembly and methods for making and using the same. Such aspects of the present invention consequently provide for the miniaturization of feedthrough assemblies inasmuch as the feedthrough components of the present invention are capable of supporting very small and hermetic conductively filled via holes in the absence of additional components, such as, for example, terminal pins, leadwires, and the like.

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.