Patent classifications
C04B2237/592
Joining Method
A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.
ELECTROSTATIC CHUCK MANUFACTURING METHOD, ELECTROSTATIC CHUCK, AND SUBSTRATE PROCESSING APPARATUS
A method of manufacturing an electrostatic chuck includes: preparing a first ceramic plate having a first hole formed therein; preparing a second ceramic plate having a second hole formed at a position different from a position of the first hole in a horizontal direction; forming a first slurry layer on the first ceramic plate or the second ceramic plate with a first slurry, the first slurry layer having a flow path formed therein to connect the first hole and the second hole; stacking the first ceramic plate and the second ceramic plate one above the other via the first slurry layer; and bonding the first ceramic plate and the second ceramic plate stacked one above the other via the first slurry layer.
SEMICONDUCTOR SUBSTRATE SUPPORT WITH MULTIPLE ELECTRODES AND METHOD FOR MAKING SAME
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
Contact and Method for Making the Same
The present application discloses a contact, which comprises a contact opening, and a Ti layer, a glue layer and a tungsten layer which completely fill the contact opening; the Ti layer is subjected to annealing treatment; the tungsten layer comprises a tungsten seed layer and a tungsten body layer; the glue layer consists of a TiN layer which is divided into a plurality of TiN sub-layers, all or part of the TiN sub-layers are subjected to the annealing treatment, and the size of grains of the TiN sub-layer subjected to the annealing treatment is limited by the thickness of the corresponding TiN sub-layer. The present application further discloses a method for making a contact. The present application can prevent the annealing treatment of the TiSi layer from producing large lattice grains in the glue layer, thus can make the tungsten seed layer be a continuous structure.
Semiconductor substrate support with multiple electrodes and method for making same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
SEMICONDUCTOR PROCESSING EQUIPMENT WITH HIGH TEMPERATURE RESISTANT NICKEL ALLOY JOINTS AND METHODS FOR MAKING SAME
A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.
MULTI-LAYER CERAMIC PLATE DEVICE
An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.
Method for producing a metal-ceramic substrate, and metal-ceramic substrate produced using such a method
Method of manufacturing a metal-ceramic substrate (1) which, in the finished state, has a ceramic layer (11) and a metal layer (12) extending along a main extension plane (HSE) and arranged one above the other along a stacking direction (S) extending perpendicularly to the main extension plane (HSE) comprising providing the metal layer (12) and the ceramic layer (11) and bonding the metal layer (12) to the ceramic layer (11) in regions to form a first region (B1), which has a materially bonded connection between the metal layer (12) and the ceramic layer (11), and a second region (B2), in which the metal layer (12) and the ceramic layer (11) are arranged one above the other without a materially bonded connection, as seen in the stacking direction (S).
ULTRAFAST LASER WELDING OF CERAMICS
Ceramic welding methods and welded articles are disclosed. The present disclosure shows that transparent and diffuse ceramics can be successfully joined using lasers. The diffuse ceramic welding can be aided by introducing a small gap for optical penetration while no gap is necessary in the transparent ceramics case. Laser welding is more versatile on transparent ceramics since one can focus through the material allowing the joining of more complex geometries and over multiple interaction zones, increasing the ultimate weld volumes.
COMPOSITION FOR SEALING
A sealing composition which can be handled in a semi-cured state and can obtain a sintered body having excellent joining strength and sealing performance is provided. A sealing composition including a solder powder, coated silver particles including silver core particles and a coating agent arranged on a surface of the silver core particles, and a solvent is provided. Further, a sintering temperature (T2) of the coated silver particles and a boiling point (T3) of the solvent satisfy T2≤T3.