C04B2237/704

Sintered body, substrate, circuit board, and manufacturing method of sintered body

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

Method to produce a ceramic matrix composite with controlled surface characteristics
11697623 · 2023-07-11 · ·

A method to produce a ceramic matrix composite with controlled surface characteristics includes: applying a scrim ply to a surface of a fiber preform, where the fiber preform includes silicon carbide fibers coated with boron nitride; infiltrating the fiber preform and the scrim ply with a slurry, thereby forming an impregnated ply on an impregnated fiber preform; infiltrating the impregnated fiber preform and the impregnated ply with a melt comprising silicon, and then cooling, thereby forming a ceramic matrix composite having a ceramic surface layer thereon, where the ceramic surface layer has a predetermined thickness and is devoid of boron; machining or grit blasting the ceramic surface layer to form an intermediate layer suitable for coating; and depositing an environmental barrier coating on the intermediate layer. Thus, a ceramic matrix composite coated with the environmental barrier coating is formed with the intermediate layer in between.

METHOD FOR MANUFACTURING CERAMIC SUSCEPTOR
20230212083 · 2023-07-06 ·

Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.

Ceramic electronic device
11694849 · 2023-07-04 · ·

A multilayer ceramic capacitor includes: a multilayer structure in which each of dielectric layers and each of internal electrode layers are stacked, wherein a relationship of 8.0≥I.sub.A/I.sub.B>1.40 is satisfied in a TSDC (Thermally Stimulated Depolarization Currents) of temperature elevation rate of 10 degrees C./min under a condition of 130 degrees C., 5 V/μm and a polarization of 30 min, when a peak current value on a lower temperature side in a temperature range of 130 degrees C. to 190 degrees C. is I.sub.A and a peak current value on a higher temperature side in a temperature range of 190 degrees C. to 280 degrees C. is I.sub.B.

CERAMIC/COPPER/GRAPHENE ASSEMBLY AND METHOD FOR MANUFACTURING SAME, AND CERAMIC/COPPER/GRAPHENE JOINING STRUCTURE
20220410529 · 2022-12-29 · ·

In a ceramic/copper/graphene assembly, a ceramic member, a copper member formed of copper or a copper alloy, and a graphene-containing carbonaceous member containing a graphene aggregate are joined. At a joining interface between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metals selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

METHOD FOR PRODUCING A METAL-CERAMIC SUBSTRATE AND FURNACE

The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

METHOD FOR PRODUCING A METAL-CERAMIC SUBSTRATE

The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Polyimide-based composite carbon film with high thermal conductivity and preparation method therefor
11535567 · 2022-12-27 · ·

The present invention discloses a polyimide-based composite carbon film with high thermal conductivity and a preparation method therefor. The preparation method includes: uniformly coating the surface of a polyimide-based carbon film with an aqueous graphene oxide solution, and then covering the same with another polyimide-based carbon film uniformly coated with an aqueous graphene oxide solution; repeating such operation; after the polyimide-based carbon films are dried, bonding the polyimide-based carbon films by means of graphene oxide so as to form a thick film; bonding the polyimide-based carbon films more tightly by means of further low-temperature hot pressing; and finally, obtaining a thick polyimide-based carbon film with high thermal conductivity by repairing defects by means of low-temperature heating pre-reduction and high-temperature and high-pressure thermal treatment. The thick polyimide-based carbon film with high thermal conductivity has a thickness greater than 100 μm and an in-plane thermal conductivity of even reaching 1700 W/mK or above.

Method for manufacturing sensor element

A method for manufacturing a sensor element that includes: a pair of electrodes; a ceramic layer having a hollow space that is to be an air introduction hole; and a first layer and a second layer stacked at both surfaces of the ceramic layer, One of the electrodes is in communication with the hollow space, The method includes: preparing an unsintered ceramic sheet, and a burn-out material sheet having a thickness different from that of the unsintered ceramic sheet, the burn-out material sheet having, in a plane orthogonal to the direction of an axial line O, a cross-sectional area substantially identical to a cross-sectional area of the pre-sintering hollow space; placing the burn-out material sheet in the pre-sintering hollow space; pressing the sheets so as to have an identical thickness; and burning out the burn-out material sheet.

COPPER/CERAMIC JOINED BODY AND INSULATING CIRCUIT SUBSTRATE
20220406677 · 2022-12-22 · ·

A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.