The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.

A bonded body of copper and ceramic includes: a copper member made of copper or a copper alloy and a ceramic member made of an aluminum oxide, the copper member and the ceramic member being bonded to each other; a magnesium oxide layer which is formed on a ceramic member side between the copper member and the ceramic member; and a Mg solid solution layer which is formed between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, in which one or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer.

A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a NiAu coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.

The present application discloses a packaging structure for a power module, comprising: a heat dissipation substrate; at least one first power device disposed on a first substrate having an insulating layer, the first substrate disposed on the heat dissipating substrate; and at least one second power device including a jumping electrode having a jumping potential, wherein the at least one second power device is disposed on at least one second substrate having an insulating layer, and the at least one second substrate is disposed on the first substrate, to reduce a parasitic capacitance between the jumping electrode and the heat dissipation substrate. The packaging structure for the power module according to the present application can reduce the parasitic capacitance between the jumping electrode of the power module and the heat dissipation substrate, thereby greatly reducing the EMI noise of the power module in operation.

A method for manufacturing a sensor element that includes: a pair of electrodes; a ceramic layer having a hollow space that is to be an air introduction hole; and a first layer and a second layer stacked at both surfaces of the ceramic layer, One of the electrodes is in communication with the hollow space, The method includes: preparing an unsintered ceramic sheet, and a burn-out material sheet having a thickness different from that of the unsintered ceramic sheet, the burn-out material sheet having, in a plane orthogonal to the direction of an axial line O, a cross-sectional area substantially identical to a cross-sectional area of the pre-sintering hollow space; placing the burn-out material sheet in the pre-sintering hollow space; pressing the sheets so as to have an identical thickness; and burning out the burn-out material sheet.

Provided is a method for manufacturing a metal-layer-joined ceramic base material board, in which at least one scribe line is formed, on each of the front and back surfaces of a ceramic base material board, along dividing lines for dividing the ceramic base material board into a plurality of ceramic boards, a metal board covering at least a portion of the dividing lines is joined to each of the front and back surface of the ceramic base material board, the metal boards are etched along the dividing lines to form a plurality of metal layers, and the plurality of metal layers are joined to each of the front and back surfaces of the ceramic base material board.

A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

A nuclear reactor fuel rod is a fuel rod for a light-water reactor. The nuclear reactor fuel rod includes a fuel cladding tube and an end plug, both of which are formed of a silicon carbide material. A bonding portion between the fuel cladding tube and the end plug is formed by brazing with a predetermined metal bonding material interposed, and/or by diffusion bonding. The predetermined metal bonding material has a solidus temperature of 1200 C. or higher. An outer surface of the bonding portion, and a portion of an outer surface of the fuel cladding tube and the end plug, which is adjacent to the outer surface of the bonding portion are covered by bonding-portion coating formed of a predetermined coating metal. The predetermined metal bonding material and the predetermined coating metal have an average linear expansion coefficient which is less than 10 ppm/K.

A joining material used for joining side surfaces of a plurality of silicon carbide-based honeycomb segments to each other to produce a silicon carbide-based honeycomb structure. The joining material contains from 0.1 to 50% by mass of processed powder generated in the production of the silicon carbide-based honeycomb segments and/or the silicon carbide-based honeycomb structure. The joining material has an average particle diameter D50 of from 0.5 to 60 m.

Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.