The present invention provides stable, cyclic bent allene metal complexes and methods of conducting chemical processes, preferably olefin hydrogenation, comprising contacting an olefin substrate, preferably an unsaturated polymer, with a cyclic bent allene metal complex as described herein, under hydrogenation conditions.

The present invention provides stable, cyclic bent allene metal complexes and methods of conducting chemical processes, preferably olefin hydrogenation, comprising contacting an olefin substrate, preferably an unsaturated polymer, with a cyclic bent allene metal complex as described herein, under hydrogenation conditions.

The various aspects presented herein relate to the perfumery industry. More particularly, the various aspects presented herein relate to malodor counteracting compositions and/or ingredients, methods for counteracting malodors, as well as to the perfumed articles or perfuming compositions comprising as an active ingredient, at least one compound selected from the group consisting of: a compound of Formula (I), a compound of Formula (II), a compound of Formula (III), a compound of Formula (IV), and mixtures thereof.

The present invention provides stable, cyclic bent allene metal complexes and methods of conducting chemical processes, preferably olefin hydrogenation, comprising contacting an olefin substrate, preferably an unsaturated polymer, with a cyclic bent allene metal complex as described herein, under hydrogenation conditions.

The present invention provides stable, cyclic bent allene metal complexes and methods of conducting chemical processes, preferably olefin hydrogenation, comprising contacting an olefin substrate, preferably an unsaturated polymer, with a cyclic bent allene metal complex as described herein, under hydrogenation conditions.

A liquid crystal composition includes one or more compounds represented by Chemical Formula 1: ##STR00001## wherein in Chemical Formula 1, A1, A2, L.sub.1 to L.sub.8, R, R, Z.sub.1 to Z.sub.3, n1, and n2 are the same as described in the specification.

The present invention is a method for producing a cycloalkyl alkyl ether compound comprising reacting substituted or unsubstituted cyclopentene or substituted or unsubstituted cyclohexene with an alcohol compound represented by a formula (2): R.sup.1OH (wherein R.sup.1 is a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 8 carbon atoms) in a gaseous state in presence of an acidic ion-exchange resin to produce a cycloalkyl alkyl ether compound represented by a formula (1): R.sup.1OR.sup.2 (wherein R.sup.1 is the same as defined above, and R.sup.2 is a substituted or unsubstituted cyclopentyl group or a substituted or unsubstituted cyclohexyl group), the acidic ion-exchange resin having a specific surface area of 20 to 50 m.sup.2/g, an average pore size of 20 to 70 nm, and a total exchange capacity of 4.8 to 6.0 eq/L-R wet resin.

The present invention is a method for producing a cycloalkyl alkyl ether compound comprising reacting substituted or unsubstituted cyclopentene or substituted or unsubstituted cyclohexene with an alcohol compound represented by a formula (2): R.sup.1OH (wherein R.sup.1 is a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 8 carbon atoms) in a gaseous state in presence of an acidic ion-exchange resin to produce a cycloalkyl alkyl ether compound represented by a formula (1): R.sup.1OR.sup.2 (wherein R.sup.1 is the same as defined above, and R.sup.2 is a substituted or unsubstituted cyclopentyl group or a substituted or unsubstituted cyclohexyl group), the acidic ion-exchange resin having a specific surface area of 20 to 50 m.sup.2/g, an average pore size of 20 to 70 nm, and a total exchange capacity of 4.8 to 6.0 eq/L-R wet resin.

A liquid crystal composition includes one or more compounds represented by Chemical Formula 1:

##STR00001## wherein in Chemical Formula 1, A1, A2, L.sub.1 to L.sub.8, R, R, Z.sub.1 to Z.sub.3, n1, and n2 are the same as described in the specification.

The present invention relates to a shielding compound, a method of forming a thin film using the shielding compound, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as a shielding agent, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the shielding agent, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, and impurities may be reduced.