Patent classifications
C07C309/23
(S)-CSA SALT OF S-KETAMINE, (R)-CSA SALT OF S-KETAMINE AND PROCESSES FOR THE PREPARATION OF S-KETAMINE
The present invention is directed to processes for the preparation of esketamine. The present invention is further directed to processes for the resolution of S-ketamine from a racemic or enantiomerically enriched mixture of ketamine. The present invention is further directed to an (S)-CSA salt of S-ketamine, more particularly a monohydrate form of the (S)-CSA salt of S-ketamine; and to an (R)-CSA salt of R-ketamine.
(S)-CSA SALT OF S-KETAMINE, (R)-CSA SALT OF S-KETAMINE AND PROCESSES FOR THE PREPARATION OF S-KETAMINE
The present invention is directed to processes for the preparation of esketamine. The present invention is further directed to processes for the resolution of S-ketamine from a racemic or enantiomerically enriched mixture of ketamine. The present invention is further directed to an (S)-CSA salt of S-ketamine, more particularly a monohydrate form of the (S)-CSA salt of S-ketamine; and to an (R)-CSA salt of R-ketamine.
Photoacid-generating compound and associated polymer, photoresist composition, and method of forming a photoresist relief image
A photoacid-generating compound has the structure ##STR00001##
wherein m, n, R.sup.1, R.sup.2, X, Y, and Z.sup. are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
Photoacid-generating compound and associated polymer, photoresist composition, and method of forming a photoresist relief image
A photoacid-generating compound has the structure ##STR00001##
wherein m, n, R.sup.1, R.sup.2, X, Y, and Z.sup. are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
ORGANIC COMPOUND AND USE THEREOF, PASSIVATION FILM, SOLAR BATTERY, AND ELECTRICAL APPARATUS
The present application provides an organic compound and use thereof, a passivation film, a solar battery, and an electrical apparatus. The organic compound is as shown in formula (1) or is an oxyacid radical salt of the compound as shown in formula (1), wherein Ar is selected from any one of substituted or unsubstituted aryl with 6 to 50 ring atoms, substituted or unsubstituted heteroaryl with 5 to 50 ring atoms, or substituted arylamino as shown in formula (A); L is selected from acyclic alkylene with 1 to 10 carbon atoms; and R.sub.1 is an oxyacid group. The organic compound is capable of improving photon-to-electron conversion efficiency and stability of a solar battery device.
##STR00001##
CRYSTAL FORM OF RIPK1 INHIBITOR, ACID SALT THEREOF, AND CRYSTAL FORM OF ACID SALT THEREOF
Disclosed are a crystal form of a RIPK1 inhibitor, an acid salt thereof, and a crystal form of an acid salt thereof. The crystal form of the RIPK1 inhibitor, the acid salt thereof, and the crystal form of the acid salt thereof have advantages of good stability and low hygroscopicity, and same have good pharmaceutical prospects.
##STR00001##
CRYSTAL FORM OF RIPK1 INHIBITOR, ACID SALT THEREOF, AND CRYSTAL FORM OF ACID SALT THEREOF
Disclosed are a crystal form of a RIPK1 inhibitor, an acid salt thereof, and a crystal form of an acid salt thereof. The crystal form of the RIPK1 inhibitor, the acid salt thereof, and the crystal form of the acid salt thereof have advantages of good stability and low hygroscopicity, and same have good pharmaceutical prospects.
##STR00001##
PHOTOACID-GENERATING COMPOUND AND ASSOCIATED POLYMER, PHOTORESIST COMPOSITION, AND METHOD OF FORMING A PHOTORESIST RELIEF IMAGE
A photoacid-generating compound has the structure
##STR00001##
wherein m, n, R.sup.1, R.sup.2, X, Y, and Z.sup. are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.
NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.
RESIST COMPOSITION AND PATTERNING PROCESS
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodinated phenoxy or iodinated phenylalkoxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.