In one embodiment, the present application discloses a photo-cleavable surface binding compound of the Formula I and Formula II: ##STR00001##
wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound.

In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II:

##STR00001##

wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.

The present invention provides compositions and methods for catalyzing the formation of carbon-silicon bonds using heme proteins. In certain aspects, the present invention provides heme proteins, including variants and fragments thereof, that are capable of carrying out in vitro and in vivo carbene insertion reactions for the formation of carbon-silicon bonds. In other aspects, the present invention provides methods for producing an organosilicon product, the method comprising providing a silicon-containing reagent, a carbene precursor, and a heme protein; and combining the components under conditions sufficient to produce an organosilicon product. Host cells expressing the heme proteins are also provided by the present invention.

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R.sup.8N(SiR.sup.9LH).sub.2, wherein R.sup.8, R.sup.9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

A process for removing metallic impurities from halogenated silicon compounds, such as chlorosilane monomers and/or chlorinated polysilanes is disclosed. The process involves treating a halogenated silicon compound with a tertiary amine and thereafter a suitable grade of activated carbon.

A composition comprises at least one a composition comprising at least one organosilicon compound which has two or more silicon atoms connected to either a carbon atom or a hydrocarbon moiety.

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II: ##STR00001##
wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.

By using this organosilane compound represented by formula (1), a surface treatment agent that contains said (hydrolyzable) organosilane compound and/or a partial (hydrolysis) condensate thereof can form a cured film which exhibits excellent lipophilic properties and has a refractive index similar to the refractive index of sebum. ##STR00001##
(A is any one of —C(═O)OR.sup.1, —C(═O)NR.sup.1.sub.2, —C(═O)SR.sup.1 and —P(═O)(OR.sup.1).sub.2; R.sup.1 is a hydrogen atom, an alkyl group, an aryl group or an aralkyl group; Y is a divalent organic group; R is an alkyl group or a phenyl group; X is a hydroxyl group or a hydrolyzable group; and n is 1-3.)

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.