The purpose of the present invention is to provide a novel primary aminosiloxane compound and a method for producing same, and more specifically, a novel primary aminomethylsiloxane compound and a method for producing same.

This primary aminosiloxane compound is represented by formula (1).

H.sub.2N—CR.sup.1R.sup.2—Si(OSiR.sup.3R.sup.4R.sup.5).sub.3.  Formula (1):

[In formula (1), R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 each independently denote a hydrogen atom or a C1-30 monovalent hydrocarbon group which may be bonded via an oxygen atom or a nitrogen atom and in which some or all carbon atom-bonded hydrogen atoms may be substituted with halogen atoms or hydroxyl groups.]

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

A silirane-functionalized compound that consists of a substrate to which a least two silirane groups of the formula (1) are covalently bonded, a mixture containing the silirane-functionalized compounds, and a process for preparing siloxanes using the mixture are described herein.

A silirane-functionalized compound that consists of a substrate to which a least two silirane groups of the formula (1) are covalently bonded, a mixture containing the silirane-functionalized compounds, and a process for preparing siloxanes using the mixture are described herein.

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: ##STR00001##
as defined herein.

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: ##STR00001##
as defined herein.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

The present invention relates to an aminosilane compound and a composition for a silicon-containing thin film comprising the same, and more particularly, to an aminosilane compound and a composition for a silicon-containing thin film comprising the same having suitable properties that can be used as a precursor for forming a silicon-containing thin film and capable of replacing chlorosilanes.