The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

A clip dispensing system, clip dispenser, and method is described herein for dispensing and applying clips to tissue during minimally invasive surgery. The system may include a grasping surgical instrument having a shaft and a grasping tool, and a clip dispenser assembled to the shaft. The clip dispenser includes an inner tube surrounded by an outer tube and a plurality of clips housed between the inner tube and the outer tube. The clips include a first jaw, an opposing second jaw, and a cavity between the first jaw and the second jaw. The cavity permits the clip to slide along the length of the shaft and over the grasping tool of the grasping surgical instrument to be clamped onto a grasped piece of tissue with the aid of a second grasping instrument.