C08F20/22

POLYMER AND WATER-REPELLENT OIL-RESISTANT COMPOSITION

Provided is a polymer comprising a repeating unit derived from a monomer (a) represented by general formula: R.sup.1R.sup.2(CH.sub.2).sub.pOR.sup.3 wherein R.sup.1 is CH.sub.3, CH.sub.2F, CHF.sub.2, CH.sub.2I, or CHFI, R.sup.2 is an alkylene group having 1 to 49 carbon atoms consisting of unit represented by CFH, an alkylene group having 2 to 49 carbon atoms consisting of unit represented by CFH and unit represented by CH.sub.2, or an alkylene group having 3 to 49 carbon atoms consisting of unit represented by CFH, unit represented by CH.sub.2, and unit represented by CHI, p is an integer of 0 to 2, and R.sup.3 is an organic residue having an ethylenically unsaturated polymerizable group.

ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

An onium salt monomer consists of a sulfonic acid anion containing a polymerizable group and being free of iodine and a triarylsulfonium cation containing iodine and fluorine. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern with satisfactory exposure latitude, edge roughness, dimension uniformity and depth of focus when processed by photolithography using high-energy radiation, as well as collapse resistance.

ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

An onium salt monomer consists of a sulfonic acid anion containing a polymerizable group and being free of iodine and a triarylsulfonium cation containing iodine and fluorine. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern with satisfactory exposure latitude, edge roughness, dimension uniformity and depth of focus when processed by photolithography using high-energy radiation, as well as collapse resistance.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND RADIATION-SENSITIVE ACID-GENERATING AGENT

A radiation-sensitive resin composition includes: an onium salt compound (1) represented by formula (1); an onium salt compound (2) different from the onium salt compound (1); a resin including a structural unit which includes an acid-dissociable group; and a solvent. W is a monovalent chain organic group having 1 to 40 carbon atoms, a monovalent cyclic organic group having 5 or less carbon atoms, or a monovalent group obtained by combining a monovalent chain organic group having 1 to 40 carbon atoms and a cyclic structure having 5 or less carbon atoms; R.sup.1 and R.sup.2 are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; R.sup.3, R.sup.4, and R.sup.5 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group; m.sub.1 is an integer of 1 to 8; and Z.sup.+ is a monovalent radiation-sensitive onium cation.

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ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

An onium salt monomer consists of an anion having an aromatic ring substituted with a polymerizable group and iodine, a substituent containing a fluorosulfonic acid anion structure and a substituent containing an iodized aromatic ring being appended to the aromatic ring, and a cation. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern having satisfactory lithography properties such as LWR and CDU as well as etch resistance.

ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

An onium salt monomer consists of an anion having an aromatic ring substituted with a polymerizable group and iodine, a substituent containing a fluorosulfonic acid anion structure and a substituent containing an iodized aromatic ring being appended to the aromatic ring, and a cation. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern having satisfactory lithography properties such as LWR and CDU as well as etch resistance.

Method for the preparation of photoaligning polymer materials and compositions

The present invention relates to a novel method for the preparation of photoaligning polymer materials comprising aryl acrylic acid ester groups, to photoalignment compositions obtained by this process, to the use of the composition as orienting layer for liquid crystals and to non-structured and structured optical elements, electro-optical elements, multi-layer systems or in nanoelectronics comprising the compositions.

METHOD FOR THE PREPARATION OF PHOTOALIGNING POLYMER MATERIALS AND COMPOSITIONS

The present invention relates to a novel method for the preparation of photoaligning polymer materials comprising aryl acrylic acid ester groups, to photoalignment compositions obtained by this process, to the use of the composition as orienting layer for liquid crystals and to non-structured and structured optical elements, electro-optical elements, multi-layer systems or in nanoelectronics comprising the compositions.

Amphiphilic copolymer with zwitterionic and fluorinated moieties
12522683 · 2026-01-13 · ·

Provided are amphiphilic copolymers that include repeat units of formulas [Z].sub.m and [P].sub.n, wherein Z is a zwitterionic structural unit including at least one pendant heteroaromatic moiety, the heteroaromatic moiety containing a positively charged quaternary nitrogen atom (e.g., a pyridine ring), and wherein at least one negatively charged functional moiety is linked to the heteroaromatic moiety directly or through a linker, wherein the linker, where present, is an optionally substituted alkyl linker; P is a structural unit including a hydrophobic moiety, the hydrophobic moiety being a linear, branched, or cyclic fluorine-substituted C.sub.1-C.sub.20 moiety; m is an integer that is 1; and n is an integer that is 1.

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising a hypervalent iodine compound, a carboxylic acid derivative, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and improved maximum resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and improved maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.