A phenolic foam and method for manufacturing same are described herein. The foam comprises at least on chlorinated hydrofluoroolefin, at least one hydrofluoroolefin and at least one hydrocarbon. The foam has excellent thermal insulation performance and excellent fire performance.

A resin sheet is made using a resin composition containing a thermosetting component (A). The thermosetting component (A) contains a maleimide resin. A thermal diffusion rate of the thermally cured resin sheet is 1.0 × 10.sup.-6 m.sup.2/s or more. The resin sheet has a thickness in a range from 5 .Math.m to 120 .Math.m .

Provided is a phenolic resin foam laminate board in which a flexible surface material is arranged on at least upper and lower surfaces of a phenolic resin foam. The phenolic resin foam contains HCFO-1224yd(Z), has a density of not less than 20 kg/m.sup.3 and not more than 55 kg/m.sup.3, a closed cell ratio of 80% or more, an average cell diameter of not less than 60 μm and not more than 200 μm, a percentage of an area seeping out from the surface material is 30% or less, and content of HCFO-1224yd(Z) per space volume of 22.4×10.sup.−3 m.sup.3 in the phenolic resin foam is not less than 0.06 mol and not more than 0.35 mol.

Provided is a phenolic resin foam laminate board in which a flexible surface material is arranged on at least upper and lower surfaces of a phenolic resin foam. The phenolic resin foam contains HCFO-1224yd(Z), has a density of not less than 20 kg/m.sup.3 and not more than 55 kg/m.sup.3, a closed cell ratio of 80% or more, an average cell diameter of not less than 60 μm and not more than 200 μm, a percentage of an area seeping out from the surface material is 30% or less, and content of HCFO-1224yd(Z) per space volume of 22.4×10.sup.−3 m.sup.3 in the phenolic resin foam is not less than 0.06 mol and not more than 0.35 mol.

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

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A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

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The method of producing a carbonaceous material for a negative electrode of a nonaqueous electrolyte secondary battery includes (1) an addition condensation step of subjecting a raw material mixture composed of phenols containing 50 mass% or greater of phenol and an aldehyde to addition condensation in the presence of a sodium-based basic catalyst at less than 5 mass% relative to the raw material mixture to produce a resol type phenol resin; (2) a heat treating step of subjecting the resol type phenol resin to a main heat treatment at a temperature of from 950° C. to 1500° C. in a non-oxidizing gas atmosphere to produce a heat-treated carbon; and (3) a coating step of coating the heat-treated carbon with pyrolytic carbon to produce a carbonaceous material.

The method of producing a carbonaceous material for a negative electrode of a nonaqueous electrolyte secondary battery includes (1) an addition condensation step of subjecting a raw material mixture composed of phenols containing 50 mass% or greater of phenol and an aldehyde to addition condensation in the presence of a sodium-based basic catalyst at less than 5 mass% relative to the raw material mixture to produce a resol type phenol resin; (2) a heat treating step of subjecting the resol type phenol resin to a main heat treatment at a temperature of from 950° C. to 1500° C. in a non-oxidizing gas atmosphere to produce a heat-treated carbon; and (3) a coating step of coating the heat-treated carbon with pyrolytic carbon to produce a carbonaceous material.

A photosensitive composition for the formation of resist underlayer films that contains a novolac phenolic resin resulting from an acid-catalyzed reaction between one or more phenolic trinuclear compounds (A) selected from the group consisting of the compounds of general formula (1) and the compounds of general formula (2) and an aldehyde (B).

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In the formulae, R.sup.1, R.sup.2, and R.sup.3 each independently represent a substituted or unsubstituted alkyl having 1 to 8 carbon atoms, R.sup.4 represents hydrogen, substituted or unsubstituted alkyl, or substituted or unsubstituted aryl, p and q are each independently an integer of 1 to 4, r is an integer of 0 to 4, and s is 1 or 2, with the proviso that the sum of r and s is 5 or less.

A photosensitive composition for the formation of resist underlayer films that contains a novolac phenolic resin resulting from an acid-catalyzed reaction between one or more phenolic trinuclear compounds (A) selected from the group consisting of the compounds of general formula (1) and the compounds of general formula (2) and an aldehyde (B).

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In the formulae, R.sup.1, R.sup.2, and R.sup.3 each independently represent a substituted or unsubstituted alkyl having 1 to 8 carbon atoms, R.sup.4 represents hydrogen, substituted or unsubstituted alkyl, or substituted or unsubstituted aryl, p and q are each independently an integer of 1 to 4, r is an integer of 0 to 4, and s is 1 or 2, with the proviso that the sum of r and s is 5 or less.