Patent classifications
C08G8/20
Composition for forming organic film
The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process. ##STR00001##
Composition for forming organic film
The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process. ##STR00001##
COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD
A composition contains: an aromatic ring-containing compound; a fluorine atom-containing polymer; and an organic solvent. The fluorine atom-containing polymer has: a first structural unit represented by formula (1); and a second structural unit represented by formula (2). In the formula (1), R.sup.1 represents a fluorine atom-containing monovalent organic group having 1 to 20 carbon atoms; and R.sup.2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. In the formula (2), R.sup.3 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; and R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.
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COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD
A composition contains: an aromatic ring-containing compound; a fluorine atom-containing polymer; and an organic solvent. The fluorine atom-containing polymer has: a first structural unit represented by formula (1); and a second structural unit represented by formula (2). In the formula (1), R.sup.1 represents a fluorine atom-containing monovalent organic group having 1 to 20 carbon atoms; and R.sup.2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. In the formula (2), R.sup.3 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; and R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.
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RESIST UNDERLAYER FILM-FORMING COMPOSITION
A polymer to which there is attached a group represented by the following formula (1):
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(wherein each of R.sub.x, S.sub.y, and S.sub.z represents a hydrogen atom or a monovalent organic group; each of R.sub.y and R.sub.z represents a single bond or a divalent organic group; each of ring Ar.sub.y and ring Ar.sub.z represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ar.sub.y and ring Ar.sub.z may be linked together to form a new ring structure therebetween; n.sub.y is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ar.sub.y; n.sub.z is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ar.sub.z; and * is a polymer bonding site).
BINDER, METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING CASTING SAND MOLD
Provided are a binder in the producing of a casting sand mold according to an ink jet type lamination shaping method in which a binder is printed with respect to sand, a method for producing the binder, and a method for producing a casting sand mold using the binder. Specifically, provided are a binder useful for a casting sand mold of an ink jet type, containing: a resol-type phenolic resin that is obtained by reacting aldehydes (A1), phenols (P1), and a compound (N) having two or more phenolic hydroxyl groups in one molecule or by reacting the aldehydes (A1) and a novolac-type phenolic resin (N1), in the presence of an alkali catalyst, and has a dispersion degree (Mw/Mn) of 1.0 to 3.5 and a phenolic monomer residue of 5% or less, a method for producing the binder, and a method for producing a casting sand mold.
COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD
The present invention provides a compound having a specific structure represented by the following formula (0), a resin having a constituent unit derived from the compound, various compositions containing the compound and/or the resin, and various methods using the compositions.
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COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD
The present invention provides a compound having a specific structure represented by the following formula (0), a resin having a constituent unit derived from the compound, various compositions containing the compound and/or the resin, and various methods using the compositions.
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COMPOUND, COMPOSITION CONTAINING THE SAME, METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING INSULATING FILM
A composition containing a polyphenol compound (B), wherein the polyphenol compound (B) is one or more selected from the group consisting of a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2):
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Method for increasing the reactivity of lignin
The present invention relates to a method for increasing the reactivity of lignin, wherein the method comprises the following steps: a) forming, under heating at a temperature of 71-94 C., an aqueous dispersion comprising alkali and lignin, wherein the alkali comprises a hydroxide of an alkali metal; and b) heating the dispersion formed in step a) at a temperature of 50-95 C. for producing alkalated lignin.