A composition for forming a resist underlayer film and a method for producing a resist pattern, the method using the composition for forming a resist underlayer film; and a method for producing a semiconductor device. A resist underlayer film-forming composition which contains an organic solvent and a polymer that has an end blocked with a compound (A), wherein: the polymer is derived from compound (B) that is represented by formula (11). (In formula (11), Y1 represents a single bond, an oxygen atom, a sulfur atom, an alkylene group having from 1 to 10 carbon atoms, the alkylene group being optionally substituted by a halogen atom or an aryl group having from 6 to 40 carbon atoms, or a sulfonyl group; each of T1 and T2 represents an alkyl group having from 1 to 10 carbon atoms; and each of n1 and n2 independently represents an integer from 0 to 4.)

Disclosed is a composition and use thereof for the recovery of hydrocarbon fluids from a subterranean reservoir. More particularly, this invention concerns sulfonated epoxy resin polymers comprising an epoxide-containing compound, a primary amino sulfonate, and optionally one or more of a primary monoamine alkylene oxide oligomer, that modify the permeability of subterranean formations and increase the mobilization and/or recovery rate of hydrocarbon fluids present in the formations.

The present invention relates to multicoat paint systems comprising basecoats and clearcoats with high solids fractions that each comprise at least one sulfonic acid compound of formula (I) or formula (II). The invention further relates to a method of producing these multicoat paint systems and to their use, and also to substrates coated with the multicoat paint system. The invention relates, furthermore, to the use of the sulfonic acid compounds of formula (I) and formula (II) in basecoats and clearcoats with high solids fractions.

Disclosed is a composition and use thereof for the recovery of hydrocarbon fluids from a subterranean reservoir. More particularly, this invention concerns -glycol containing sulfonated epoxy resin composition and method for preparing said composition. The -glycol containing sulfonated epoxy resin composition is made by forming a reaction product comprising an epoxide-containing compound, a primary amino sulfonate, and optionally one or more of a primary monoamine alkylene oxide oligomer, followed by converting any unreacted epoxide groups in the reaction product to -glycol groups by hydrolysis. Said -glycol containing sulfonated epoxy resin compositions demonstrate good solubility in aqueous solutions and are useful for modifying the permeability of subterranean formations and increasing the mobilization and/or recovery rate of hydrocarbon fluids present in the formations.

Degradable sulfur-containing hyperbranched epoxy resin and a preparation method thereof. The preparation method comprises initiating a reaction of a mercaptocyclotriazine compound and a binary olefin by ultraviolet light to prepare a mercapto hyperbranched polymer; then reacting with glycidyl methacrylate to obtain a degradable sulfur-containing hyperbranched epoxy resin of which the molecular weight is about 3,000-35,400 g/mol. After the degradable sulfur-containing hyperbranched epoxy resin is cured, a cyclotriazine structure can be completely degraded within 1.5 h in a phosphoric acid solution at the temperature of 80 DEG C, thus realizing the recycle of the epoxy resin. The invention is simple in process, low in reaction temperature, rapid in reaction and high in yield, the sulfur-containing structure lowers curing temperature and realizes rapid curing, and cyclotriazine structure has a degradation function, and is expected to be used in the fields of strengthening and toughening of the epoxy resins, solvent-free coatings, electronic packaging.

A polyaddition compound and/or a salt thereof is obtainable by the reaction of epoxy resin based on at least one diglycidyl ether of Formula (I) ##STR00001##
wherein R=a divalent aliphatic or monocyclic aromatic or bicyclic aromatic radical or mixtures thereof; with at least one polyether alcohol of Formula (II)
R.sup.1-[OEt].sub.n-[OPr].sub.m-[OBu].sub.s-[OSO].sub.r-OHFormula (II)
wherein R.sup.1=independently identical or different, linear or branched, optionally aromatic hydrocarbyl radicals having 1 to 18 carbon atoms, [OEt]=ethylene oxide radical, [OPr]=propylene oxide radical, [OBu]=butylene oxide radical, [OSO]=styrene oxide radical, n=0 to 100, m=0 to 50, s=0 to 20, and r=0 to 3, with the proviso that n+m+s+r=3-103, and with at least one compound containing at least one functional group selected from sulfate groups, sulfonate groups, carboxylate groups and phosphate groups.

Degradable sulfur-containing hyperbranched epoxy resin and a preparation method thereof. The preparation method comprises initiating a reaction of a mercaptocyclotriazine compound and a binary olefin by ultraviolet light to prepare a mercapto hyperbranched polymer; then reacting with glycidyl methacrylate to obtain a degradable sulfur-containing hyperbranched epoxy resin of which the molecular weight is about 3,000-35,400 g/mol. After the degradable sulfur-containing hyperbranched epoxy resin is cured, a cyclotriazine structure can be completely degraded within 1.5 h in a phosphoric acid solution at the temperature of 80 DEG C, thus realizing the recycle of the epoxy resin. The invention is simple in process, low in reaction temperature, rapid in reaction and high in yield, the sulfur-containing structure lowers curing temperature and realizes rapid curing, and cyclotriazine structure has a degradation function, and is expected to be used in the fields of strengthening and toughening of the epoxy resins, solvent-free coatings, electronic packaging.

A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, Y represents OCO, O or S, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

Disclosed is a composition and use thereof for the recovery of hydrocarbon fluids from a subterranean reservoir. More particularly, this invention concerns sulfonated epoxy resin polymers comprising an epoxide-containing compound, a primary amino sulfonate, and optionally one or more of a primary monoamine alkylene oxide oligomer, that modify the permeability of subterranean formations and increase the mobilization and/or recovery rate of hydrocarbon fluids present in the formations.

A polyaddition compound and/or a salt thereof is obtainable by the reaction of epoxy resin based on at least one diglycidyl ether of Formula (I)

##STR00001##

wherein R=a divalent aliphatic or monocyclic aromatic or bicyclic aromatic radical or mixtures thereof; with at least one polyether alcohol of Formula (II)

R.sup.1-[OEt].sub.n-[OPr].sub.m-[OBu].sub.s-[OSO].sub.r-OHFormula (II)

wherein R.sup.1=independently identical or different, linear or branched, optionally aromatic hydrocarbyl radicals having 1 to 18 carbon atoms, [OEt]=ethylene oxide radical, [OPr]=propylene oxide radical, [OBu]=butylene oxide radical, [OSO]=styrene oxide radical, n=0 to 100, m=0 to 50, s=0 to 20, and r=0 to 3, with the proviso that n+m+s+r=3-103, and with at least one compound containing at least one functional group selected from sulfate groups, sulfonate groups, carboxylate groups and phosphate groups.