A polymer comprising polysiloxane, silphenylene, isocyanuric acid, and norbornene skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency, light resistance, and heat resistance.

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

A photosensitive resin composition comprising (A) a silicone resin containing an epoxy and/or phenolic hydroxyl group, (B) a photoacid generator, and (C) a cure promoter selected from diazabicycloundecene, diazabicyclononene, an organic salt of diazabicycloundecene derivative, and an organic salt of diazabicyclononene derivative is shelf stable. A photosensitive resin coating obtained therefrom may be processed to form a fine size pattern. The resin coating has improved film properties including chemical resistance, adhesion to substrates, mechanical properties, electric insulation, and copper migration resistance, and is thus fully reliable as an insulating protective film.

Provided is a heat dissipation material comprising a mesogen/silicon compound (co)polymer having a number average molecular weight of 1,000-500,000, represented by general formula (1). ##STR00001##
(Ar is a mesogen group selected from the structure represented by the following formulas. ##STR00002##
a represents a positive number from 0.5 to 1, b represents a number from 0 to 0.5 (with the caveat that a and b each represent the ratio of each number of repeating units in molecules, and a+b=1). R.sub.1 is independently a monovalent hydrocarbon group which does not independently include a C.sub.1-8 aliphatic unsaturated bond. R.sub.2 is independently a hydrogen atom, Si(CH.sub.3).sub.3, Si(CH.sub.3).sub.2(OH), Si(CH.sub.3).sub.2(CHCH) or Si(CH.sub.3).sub.2(CH.sub.2CHCH.sub.2)). This heat dissipation material has excellent thermal conductivity, and further shows good thermoplastic properties and has excellent moldability, and hence can be suitably used as a resin material for heat dissipation materials and semiconductor devices and electronic parts in particular.

Provided is a heat dissipation material comprising a mesogen/silicon compound (co)polymer having a number average molecular weight of 1,000-500,000, represented by general formula (1). ##STR00001##
(Ar is a mesogen group selected from the structure represented by the following formulas. ##STR00002##
a represents a positive number from 0.5 to 1, b represents a number from 0 to 0.5 (with the caveat that a and b each represent the ratio of each number of repeating units in molecules, and a+b=1). R.sub.1 is independently a monovalent hydrocarbon group which does not independently include a C.sub.1-8 aliphatic unsaturated bond. R.sub.2 is independently a hydrogen atom, Si(CH.sub.3).sub.3, Si(CH.sub.3).sub.2(OH), Si(CH.sub.3).sub.2(CHCH) or Si(CH.sub.3).sub.2(CH.sub.2CHCH.sub.2)). This heat dissipation material has excellent thermal conductivity, and further shows good thermoplastic properties and has excellent moldability, and hence can be suitably used as a resin material for heat dissipation materials and semiconductor devices and electronic parts in particular.

The present invention relates to a silicon polymer production method using a non-transition-metal-catalyst method of hydrosilylation, and more specifically relates to a production method for a silicon polymer using a non-transition-metal-catalyst method of hydrosilylation, wherein an environmentally friendly silicon polymer is produced by using hydrosilylation using a non-transition metal as a catalyst, thereby avoiding the use of platinum, palladium and rhodium or other expensive platinum group catalysts and so achieving outstanding economic viability and making it possible to prevent residues of heavy metals.

The present invention relates to a silicon polymer production method using a non-transition-metal-catalyst method of hydrosilylation, and more specifically relates to a production method for a silicon polymer using a non-transition-metal-catalyst method of hydrosilylation, wherein an environmentally friendly silicon polymer is produced by using hydrosilylation using a non-transition metal as a catalyst, thereby avoiding the use of platinum, palladium and rhodium or other expensive platinum group catalysts and so achieving outstanding economic viability and making it possible to prevent residues of heavy metals.