An object is to provide a resin composition having excellent performance as a binder such as adhesiveness and, at the same time, retaining solution properties favorably even after a solution is stored for a long period of time. A modified polyolefin resin composition includes a modified polyolefin resin (C), in which the modified polyolefin resin (C) is a resin made by modifying a polymer (A) that is a polymer (a) of a polyolefin resin or a chlorinated polyolefin resin and an α,β-unsaturated carboxylic acid derivative having a structure derived from at least one carboxy group or a chlorinated product (b) thereof with a modification component including an alcohol (B); and a residual ratio of the structure derived from at least one carboxy group in the modified polyolefin resin (C) is 50% or more and 80% or less.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

The solid content contains a resin component (A) and a filler (B). The resin component (A) includes at least one of a fluorine-containing copolymer (a1) or a silicon-containing copolymer (a2). The fluorine-containing copolymer (a1) includes a fluorine-containing segment and an acrylic segment containing no fluorine or silicon. The silicon-containing copolymer (a2) includes a silicon-containing segment and an acrylic segment containing no fluorine or silicon. The filler (B) has a mean particle size falling within a range from 10 nm to 200 nm.

To provide a water/oil repellent article which presents little burden on the environment, while being excellent in water/oil repellency, washing durability of the water repellency and friction durability of the water repellency; a method for producing such a water/oil repellent article; and a water/oil repellent composition and a water/oil repellent kit to be used for producing such a water/oil repellent article. A water/oil repellent article that comprises a substrate and, as adhered to the surface of the substrate, a fluorinated polymer having structural units based on monomer (a) having a C.sub.1-6 perfluoroalkyl group, and a specific fluorinated ether compound; a method for producing the water/oil repellent article, which comprises letting the fluorinated polymer and fluorinated ether compound be adhered to the substrate; a water/oil repellent composition which comprises the fluorinated polymer and fluorinated ether compound; and a water/oil repellent kit which comprises a first container accommodating a first liquid containing the fluorinated polymer and a second container accommodating a second liquid containing the fluorinated ether compound.

A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; and a radiation-sensitive acid generating agent. The radiation-sensitive acid generating agent includes a sulfonate anion and a radiation-sensitive cation. The sulfonate anion includes two or more rings, and an iodine atom and a monovalent group having 0 to 10 carbon atoms which includes at least one of an oxygen atom and a nitrogen atom bond to at least one of the two or more rings. The ring is preferably an aromatic ring. The radiation-sensitive acid generating agent is preferably a compound represented by formula (1). In the formula (1), A.sup.1 represents a group obtained from a compound which includes a ring having 3 to 20 ring atoms by removing (p+q+r+1) hydrogen atoms on the ring. ##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.