C09D161/12

Method for coating pipe with acid-curable resin and acid curing agent

In the coating method, a pipe for transporting oil and/or gas mined from underground is provided. An acid curable resin is passed through the pipe to adhere the acid curable resin to at least a part of an inner wall of the pipe. Then, an acid curing agent is passed through the pipe to allow the acid curing agent to make contact with the acid curable resin such that the acid curable resin is cured.

Method for coating pipe with acid-curable resin and acid curing agent

In the coating method, a pipe for transporting oil and/or gas mined from underground is provided. An acid curable resin is passed through the pipe to adhere the acid curable resin to at least a part of an inner wall of the pipe. Then, an acid curing agent is passed through the pipe to allow the acid curing agent to make contact with the acid curable resin such that the acid curable resin is cured.

Adhesive formulation and also method for the treatment of reinforcing inserts
09771502 · 2017-09-26 · ·

The present invention relates to an adhesive formulation in the form of an aqueous dispersion with a solids content of 10 to 40% by weight relative to the adhesive formulation, for the treatment of reinforcing inserts for the production of reinforced polymer products, 100% by weight of the solids containing a) 1 to 20% by weight of a bisphenol A epoxy novolak, b) 0 to 20% by weight of an entirely or partially blocked isocyanate, c) 60 to 92% by weight of a resorcinol formaldehyde latex (RFL).

NOVOLAC TYPE PHENOL RESIN, MANUFACTURING METHOD THEREFOR, PHOTOSENSITIVE COMPOSITION, RESIST MATERIAL AND COATING FILM
20170260315 · 2017-09-14 ·

The present invention provides a photosensitive composition having excellent heat resistance, low absorbance at the exposure light at wavelengths of g-line, h-line, and i-line, and satisfactory sensitivity even when the thickness of a resist film is increased, and also provides a resist material, a coating film thereof, a novolac phenol resin suitable for these applications, and a method for producing the phenol resin. Specifically, there is provided a novolac phenol resin produced by reacting a phenolic trinuclear compound (A) with formaldehyde under an acid catalyst, the phenolic trinuclear compound (A) including a phenolic trinuclear compound (A1) produced by condensation reaction of dialkyl-substituted phenol with a hydroxyl group-containing aromatic aldehyde and a phenol trinuclear compound (A2) produced by condensation reaction of dialkyl-substituted phenol having alkyl groups at the 2- and 3-positions, 2- and 5-position, the 3- and 4-positions, or 3- and 5-positions with an aromatic aldehyde not having a hydroxyl group, wherein the molar ratio of the phenolic trinuclear compound (A1) to the phenolic trinuclear compound (A2) is 20:80 to 90:10.

Composition for forming resist underlayer film, resist underlayer film, method for forming resist pattern and method for producing semiconductor device

A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3≤(n.sup.12+n.sup.13+n.sup.14+n.sup.15)≥6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2≤(n.sup.16+n.sup.17+n.sup.18+n.sup.19)≤5; and m.sup.12 is an integer of 2 to 10).

Composition for forming resist underlayer film, resist underlayer film, method for forming resist pattern and method for producing semiconductor device

A resist underlayer film forming composition characterized by containing (A) a compound represented by formula (1) (in formula (1), independently, R.sup.1 represents a C1 to C30 divalent group; each of R.sup.2 to R.sup.7 represents a C1 to C10 linear, branched, or cyclic alkyl group, a C6 to C10 aryl group, a C2 to C10 alkenyl group, a thiol group, or a hydroxyl group; at least one R.sup.5 is a hydroxyl group or a thiol group; each of m.sup.2, m.sup.3, and m.sup.6 is an integer of 0 to 9; each of m.sup.4 and m.sup.7 is an integer of 0 to 8; m.sup.5 is an integer of 1 to 9; n is an integer of 0 to 4; and each of p.sup.2 to p.sup.7 is an integer of 0 to 2) and a cross-linkable compound represented by formula (2-1) or (2-2) (in formula (2), Q.sup.1 represents a single bond or an m.sup.12-valent organic group; each of R.sup.12 and R.sup.15 independently represents a C2 to C10 alkyl group or a C2 to C10 alkyl group having a C1 to C10 alkoxy group; each of R.sup.13 and R.sup.16 represents a hydrogen atom or a methyl group; each of R.sup.14 and R.sup.17 represents a C1 to C10 alkyl group or a C6 to C40 aryl group; n.sup.12 is an integer of 1 to 3; n.sup.13 is an integer of 2 to 5; n.sup.14 is an integer of 0 to 3; n.sup.15 is an integer of 0 to 3, with these ns having a relationship of 3≤(n.sup.12+n.sup.13+n.sup.14+n.sup.15)≥6; n.sup.16 is an integer of 1 to 3; n.sup.17 is an integer of 1 to 4; n.sup.18 is an integer of 0 to 3; n.sup.19 is an integer of 0 to 3, with these ns having a relationship of 2≤(n.sup.16+n.sup.17+n.sup.18+n.sup.19)≤5; and m.sup.12 is an integer of 2 to 10).

Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate

A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R.sup.2 to R.sup.5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar.sup.1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R.sup.6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9. ##STR00001##

Phenolic epoxy system

The embodiments described herein generally relate to methods and chemical compositions of phenolic epoxy systems. In one embodiment, a composition comprising a phenolic epoxy resin system includes an epoxy resin component and an alkoxylated phenol-aldehyde novolac resin.

Phenolic epoxy system

The embodiments described herein generally relate to methods and chemical compositions of phenolic epoxy systems. In one embodiment, a composition comprising a phenolic epoxy resin system includes an epoxy resin component and an alkoxylated phenol-aldehyde novolac resin.

Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin

An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1). ##STR00001##