C09D161/12

Composition for forming organic film

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process. ##STR00001##

COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD
20210286267 · 2021-09-16 · ·

A composition contains: an aromatic ring-containing compound; a fluorine atom-containing polymer; and an organic solvent. The fluorine atom-containing polymer has: a first structural unit represented by formula (1); and a second structural unit represented by formula (2). In the formula (1), R.sup.1 represents a fluorine atom-containing monovalent organic group having 1 to 20 carbon atoms; and R.sup.2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. In the formula (2), R.sup.3 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; and R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.

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COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD
20210286267 · 2021-09-16 · ·

A composition contains: an aromatic ring-containing compound; a fluorine atom-containing polymer; and an organic solvent. The fluorine atom-containing polymer has: a first structural unit represented by formula (1); and a second structural unit represented by formula (2). In the formula (1), R.sup.1 represents a fluorine atom-containing monovalent organic group having 1 to 20 carbon atoms; and R.sup.2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. In the formula (2), R.sup.3 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; and R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.

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COMPOSITION, RESIST UNDERLAYER FILM, AND RESIST PATTERN-FORMING METHOD
20210286267 · 2021-09-16 · ·

A composition contains: an aromatic ring-containing compound; a fluorine atom-containing polymer; and an organic solvent. The fluorine atom-containing polymer has: a first structural unit represented by formula (1); and a second structural unit represented by formula (2). In the formula (1), R.sup.1 represents a fluorine atom-containing monovalent organic group having 1 to 20 carbon atoms; and R.sup.2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. In the formula (2), R.sup.3 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; and R.sup.4 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.

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RESIST UNDERLAYER FILM-FORMING COMPOSITION

A polymer to which there is attached a group represented by the following formula (1):

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(wherein each of R.sub.x, S.sub.y, and S.sub.z represents a hydrogen atom or a monovalent organic group; each of R.sub.y and R.sub.z represents a single bond or a divalent organic group; each of ring Ar.sub.y and ring Ar.sub.z represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ar.sub.y and ring Ar.sub.z may be linked together to form a new ring structure therebetween; n.sub.y is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ar.sub.y; n.sub.z is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ar.sub.z; and * is a polymer bonding site).

RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING CYCLIC CARBONYL COMPOUND

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING CYCLIC CARBONYL COMPOUND

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN

An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).

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COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN

An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).

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PRIMER COMPOSITION, PRIMER COATING FILM AND FORMATION METHOD THEREFOR, AND FORMATION METHOD FOR COATING FILM

Provided is a primer composition capable of forming, in a short time, a primer coating film excellent in adhesion to a metal substrate, adhesion to a polyamide resin-containing finish coating film, and corrosion resistance. A primer composition comprises: a phenol resin (A); a polyamide resin (B); and a solvent (C), wherein the phenol resin (A) is a resol-type phenol resin, the polyamide resin (B) is soluble in the solvent (C), and a solid content mass ratio (A/B) between the phenol resin (A) and the polyamide resin (B) is 80/20 to 99/1.