A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.

Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.

Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, a self-stopping agent, and a cationic polymer.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, a self-stopping agent, and a cationic polymer.

Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, addition polymer precursor compounds, catalysts, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one polymer precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. Embodiments of the disclosure further provide a polishing pad with polymeric layers that may be interpenetrating polymer networks.

Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, addition polymer precursor compounds, catalysts, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one polymer precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions. Embodiments of the disclosure further provide a polishing pad with polymeric layers that may be interpenetrating polymer networks.

A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: ##STR00001##
wherein R is an aliphatic comprising group and R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: ##STR00001##
wherein R is an aliphatic comprising group and R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

Data indicative of a desired shape of the polishing pad to be fabricated by droplet ejection by the additive manufacturing system is received. The data includes a desired shape defining a desired profile including a polishing surface having one or more partitions separated by one or more grooves on the polishing pad. Data indicative of distortions from the desired profile caused by dispensing of layers by droplet ejection by the additive manufacturing system is generated. Data indicative of an initial layer to dispense by droplet ejection is generated to at least partially compensate for the distortions from the desired profile. The initial layer is dispensed on a support by droplet ejection. Overlying layers are dispensed on the initial layer by droplet ejection by the additive manufacturing system to form the polishing pad.