Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 μS/cm or more, and a pH is 2 to 4.

A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 μS/cm or more, and a pH is 2 to 4.

There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.

A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.

A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

A polishing solution according to an embodiment includes an exothermic agent that generates heat through application of an alternating magnetic field thereto, and a viscosity modifier that undergoes a reversible phase transition between a gel state and a sol state depending on temperature.

A polishing solution according to an embodiment includes an exothermic agent that generates heat through application of an alternating magnetic field thereto, and a viscosity modifier that undergoes a reversible phase transition between a gel state and a sol state depending on temperature.

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.