Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.

A polycrystalline abrasive grain includes: a plurality of cBN particles; and a binder that binds the plurality of cBN particles, wherein the binder includes at least one of nitride, carbide, and carbonitride of one selected from a group consisting of a group 4a metal, a group 5a metal, and a group 6a metal in a periodic table, and a content of the binder in the polycrystalline abrasive grain is more than or equal to 5 volume % and less than or equal to 50 volume %.

A system may include an energy delivery device and a computing device. The computing device may be configured to: control the energy delivery device to deliver energy to an abrasive coating, wherein the abrasive coating comprises a metal matrix and abrasive particles at least partially encapsulated by the metal matrix; and control the energy delivery device to scan the energy across a surface of the abrasive coating and form a series of softened or melted portions of the metal matrix.

The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO.sub.2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

A magnetizable abrasive particle. The magnetizable abrasive particle has a ceramic particle having an outer surface; and a continuous metal coating on the outer surface; wherein the core hardness of the ceramic particle is at least 15 GPa; wherein the continuous metal coating comprises iron, cobalt or an alloy of iron and cobalt; and wherein the thickness of the continuous metal coating is less than 1000 nm. A method of making the magnetizable abrasive particle is also disclosed.

An abrasive article can include a body including abrasive particles contained in the body and ceramic particles contained within a bond material. The ceramic particles can have an average particle size D50c of at least 2 microns and at most 75 microns. The abrasive particles can include an average particle size D50a greater than the average particle size D50c.

Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

The invention relates to SiC-bound diamond hard material particles, a porous component formed with SiC-bound diamond particles, methods for producing same and the use thereof. Diamond hard material particles and components have a composition of 30 vol. % to 65 vol. % diamond, 70 vol % to 35 vol. % SiC and 0 to 30 vol. % Si, and a component has a porosity in the range of 10% to 40%

A polishing liquid contains permanganate ions, a weak acid, and a soluble salt of the weak acid. The polishing liquid preferably has a pH of 0.5 to 6.0 at 25 C. before commencement of polishing. When a 0.1 mol/L aqueous solution of sodium hydroxide is added to 100 mL of the polishing liquid having been adjusted to pH 3.0 to 4.0 at 25 C., the amount of the sodium hydroxide aqueous solution necessary to raise the pH of the polishing liquid by 0.5 is preferably 0.1 to 100 mL. The weak acid is preferably acetic acid.

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.