High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

The present disclosure provides a method of making a chemical mechanical planarization slurry. The method includes contacting a chemical mechanical planarization slurry precursor including a carrier and a plurality of abrasive particles with a semi-permeable fiber membrane. Upon contact, the method further includes separating the chemical mechanical planarization slurry precursor into a concentrate and an effluent. The concentrate includes the chemical mechanical planarization slurry and the effluent includes the carrier and a plurality of particles. The particles of the effluent have a median size that is less than a median size of the abrasive particles of the concentrate. In the method a pressure difference measured between an inlet to which the chemical mechanical planarization slurry precursor is supplied and a first outlet to which the effluent is supplied is in a range of from about 1 psi to about 15 psi.

Provided herein are compositions comprising a first colloidal silica particle that is not surface-modified and a second colloidal silica particle that is surface modified to carry a negative charge. Also provided herein are methods for selectively removing HfO.sub.2 or SiO.sub.2 from a surface.

An abrasive solution for finishing a metal part is provided. The abrasive solution includes abrasive particles suspended in a solution. The abrasive particles are configured to abrade a surface of the metal part. The abrasive particles are substantially non-responsive to a magnetic field. The abrasive solution also includes magnetic particles suspended in the solution. The magnetic particles are configured to respond to a magnetic field by aggregating together such that a local flow pattern of the solution changes in response to the aggregated magnetic particles.

Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

The present invention provides, in polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, means that is capable of improving a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials. The present invention relates to a polishing composition used for polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, the polishing composition containing: organic acid-immobilized silica; a dispersing medium; a selection ratio improver that improves a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials; and an acid, in which the selection ratio improver is organopolysiloxane having a hydrophilic group.

Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive at a concentration equal and/or greater than (.Math.) 2.0 wt. %; a planarization agent selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, polymers thereof, derivatives thereof, and combinations thereof, wherein the polymers have a molecular weight between 10 Dalton to 5 million Dalton, preferably 50 Dalton to 1 million Dalton; corrosion inhibitor; water soluble solvent; and optionally, rate boosting agent, pH adjusting agent, oxidizing agent, and chelator.