The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Provided herein are abrasive compositions that use surfactants containing block copolymers of both propylene oxide and ethylene oxide moieties. Abrasive compositions derived from these copolymers were capable of providing both superior levels of cut rate while preserving a high quality surface finish on gelcoat surfaces comparable to those achieved using conventional rubbing compounds.

Provided is a polishing composition that is produced at low cost and can impart high-grade mirror finishing to ceramic. The polishing composition includes abrasives, has a pH of 6.0 or more to 9.0 or less, and is used for polishing ceramic.

Provided is a polishing composition that is produced at low cost and can impart high-grade mirror finishing to ceramic. The polishing composition includes abrasives made of carbide, and is used for polishing ceramic.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

The present disclosure provides a polydispersion large-particle-size silica sol and a method of preparing the same. The polydispersion large-particle-size silica sol is mainly used as a polishing solution to enhance a polishing rate. The preparing method prepares the silica sol by stirring and heating a monodisperse spherical silica sol with a particle size of 20 nm-30 nm which is taken as a seed crystal, and meanwhile constantly adding, by drops, the seed crystal of the monodisperse spherical silica sol with a particle size of 20 nm-30 nm and active silicic acid into a reaction system, wherein during the whole reaction process, a heating concentration method is adopted to maintain a constant liquid level and during this period, inorganic dilute alkali solution is added by drops to maintain the pH value of the system between 9.5 and 10.5; cooling is performed after heat preservation. With the silica sol prepared according to the present disclosure, the polishing rate can be effectively enhanced, and meanwhile, occurrences of scratches can be reduced.

Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.

A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm.sup.2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.

Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.

Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.