Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.

A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

The present invention relates to a suspension of cerium oxide particles in a liquid phase, in which said particles comprise secondary particles comprising primary particles, and a process for preparing said liquid suspension in which the cerium IV/total cerium molar ratio before precipitation is comprised between 1/10000 and 1/500000 and that the thermal treatment is being carried out under an inert atmosphere.

Aiming at providing a ceria-based composite particle dispersion capable of polishing silica film, Si wafer or even hard-to-process material at high polishing rate, and can give high surface accuracy, disclosed is a ceria-based composite particle dispersion that contains a ceria-based composite particle that has an average particle size of 50 to 350 nm, to solve the aforementioned problem, featured by that the ceria-based composite particle has a mother particle, a cerium-containing silica layer, a child particle, and an easily soluble silica-containing layer; the mother particle contains amorphous silica as a major ingredient; the child particle contains crystalline ceria as a major ingredient; ratio of the mass of the easily soluble silica-containing layer relative to the mass of the ceria-based composite particle falls in a specific range; mass ratio of silica and ceria in the ceria-based composite particle falls in a specific range; the ceria-based composite particle, when analyzed by X-ray diffractometry, shows only a crystal phase of ceria; and the ceria-based composite particle has an average crystallite size of the crystalline ceria, when analyzed by X-ray diffractometry, of 10 to 25 nm.

Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

The present disclosure provides a novel azeotropic or azeotrope-like composition comprising hydrogen fluoride and 1,1,2-trifluoroethane (HFC-143), 1-chloro-2, 2-difluoroethane (HCFC-142), or 1,2-dichloro-1-fluoroethane (HCFC-141); and a separation method using the composition.

An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HFC-143. An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HCFC-142. An azeotropic or azeotrope-like composition comprising hydrogen fluoride and HCFC-141. A separation method of a composition comprising hydrogen fluoride and at least one member selected from the group consisting of HFC-143, HCFC-142, and HCFC-141.

The present disclosure provides a processing method of suspension abrasive jets, and the method comprises the following steps. Provide a workpiece on the processing machine. A suspension abrasive containing a plurality of abrasive particles with the same electrical property is provided in an abrasive suspension container. A non-aqueous fluid is supplied to the abrasive suspension container from a high pressure source. The workpiece is machined by jetting a suspension abrasive jet that couples a suspension abrasive and the non-aqueous fluid from a nozzle. The suspension abrasive and the non-aqueous fluid of the suspension abrasive jet are respectively recycled to the abrasive suspension container and the high pressure source by an abrasive separation and recycling device after the process.

A lubricated mechanical polishing (LMP) process is provided that uses hard nanoparticles of less than 5 nm diameter dispersed in a fluid lubricant as a polishing slurry to produce an ultra-smooth surface on a hard metallic or non-metallic substrate with a sub-nanometer surface roughness substantially less than that produced by silica chemical mechanical polishing.

An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.