A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

The present invention discloses an Er doped Ga.sub.2O.sub.3 film, together with its preparation method and the application in the field of luminescence. The preparation method contains steps of: (1) the films are deposited by means of Radio-Frequency magnetron sputtering onto the heated substrates after the pre-sputtering for at least 5 minutes, selecting Er doped Ga.sub.2O.sub.3 target or Er and Ga.sub.2O.sub.3 targets, with the ambient of Ar and O.sub.2; (2) the films as prepared in step (1) are thermally treated at the temperature higher than 300° C. in the ambient of O.sub.2 or N.sub.2, in order to optically activate Er.sup.3+ and crystalize Ga.sub.2O.sub.3 hosts meanwhile, followed by natural cooling, obtaining the Er doped Ga.sub.2O.sub.3 films as described. The preparation technology of the present invention is simple, with a good process compatibility. It is believed that the present invention will be widely used in the field of silicon-based integrated light sources, semiconductor luminescence, optical communication, with broad application prospects.

A display panel and an electronic device including the display panel are provided, where the display panel includes a quantum dot composite including a matrix and a plurality of quantum dots and titanium dioxide (TiO.sub.2) particles dispersed in the matrix, the plurality of quantum dots include silver and gallium, exhibit an emission peak wavelength of from about 500 nm to about 550 nm, and a full width at half maximum of the emission peak is greater than or equal to about 10 nm and less than or equal to about 50 nm, and where the quantum dot composite has a mole ratio of silver to titanium of greater than or equal to about 0.4:1 and less than or equal to about 15:1, and a mole ratio of gallium to titanium of greater than or equal to about 0.4:1 and less than or equal to about 20:1.

A semiconductor nanoparticle, including silver, a Group 13 metal, and a chalcogen element, wherein the semiconductor nanoparticle emits a first light, the Group 13 metal includes gallium, and optionally further includes indium, aluminum, or a combination thereof, the chalcogen element includes sulfur, and optionally further includes selenium, the first light has a full width at half maximum of greater than or equal to about 5 nanometers (nm) to less than or equal to about 70 nm, the first light has a maximum emission wavelength of greater than or equal to about 500 nm to less than or equal to about 600 nm, the semiconductor nanoparticle has a quantum yield of greater than or equal to about 50%, a mole ratio of gallium to sulfur is greater than or equal to about 0.1:1 to less than or equal to about 1:1, and a charge balance value defined by Equation 1 herein.

A color conversion panel, comprising a color conversion layer comprising a color conversion region and optionally a partition wall defining each region of the color conversion layer, wherein the color conversion region comprises a first region corresponding to a first pixel, the first region comprises a first composite, the first composite comprises a matrix and a semiconductor nanoparticle, wherein the semiconductor nanoparticle is dispersed in the matrix, the semiconductor nanoparticle comprises silver, a Group 13 metal, zinc, and a chalcogen element, the semiconductor nanoparticle emits a first light, the Group 13 metal is indium, gallium, aluminum, or a combination thereof, the chalcogen element is sulfur, selenium, or a combination thereof, and in the semiconductor nanoparticle, a mole ratio of zinc to a total sum of silver, Group 13 metal, and zinc is greater than or equal to about 0.01:1.

A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.