Patent classifications
C09K11/706
Quantum dots with a III-V core and an alloyed II-VI external shell
The present disclosure relates to quantum dots with a core of III-V material, a first layer of II-VI material and an external shell of II-VI material to be used, for example, in downconverters. The external shell is preferably made of an alloy of Zn and Cd with Se or S. Introducing a small amount of Cd in the external shell provides excellent absorbance performance in blue, violet and UV wavelengths. The amount of Cd needed for this increase in absorbance can be very low. Further, the emitted light can be nearly monochromatic, which is especially interesting in electronic applications.
Semiconductor phosphor
A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.
QUANTUM DOTS WITH A III-V CORE AND AN ALLOYED II-VI EXTERNAL SHELL
This disclosure relates to quantum dots with a core of III-V material, a first layer of II-VI material and an external shell of II-VI material to be used, for example, in downconverters. The external shell is preferably made of an alloy of Zn and Cd with Se or S. The inventors have demonstrated that introducing a small amount of Cd in the external shell provides excellent absorbance performance in blue, violet and UV wavelengths. The amount of Cd needed for this increase in absorbance can be very low. The inventors have shown that the emitted light can be nearly monochromatic, which is especially interesting in electronic applications.
Color-Converting Structures and Light-Emitting Structures and Visual Displays Made Therewith
Color-conversion structures for converting input pump light of a color to one or more differing colors. In some embodiments, the color-conversion structure includes a color-conversion (CC) layer having an input-side coating configured to optimize the amount of the pump light reaching the CC layer and to optimize the amount of color-converted light output by the CC layer. In some embodiments, the CC layer has an output-side coating configured to minimize the amount of unconverted pump light output from the CC layer and to maximize the color-converted light output from the CC layer. Various treatment for enhancing the performance of color-converting structures are also disclosed, as are a number of material combinations for quantum-well (QW) based CC layers and alternatives to QW-based CC layers. Also disclosed are light-emitting structures that each include a color-conversion structure made in accordance with the present disclosure, as well as displays composed of such light-emitting structures.
SEMICONDUCTOR NANOPARTICLES, AND DISPLAY DEVICE AND OLED DISPLAY DEVICE COMPRISING THE SAME
A display device includes semiconductor nanoparticles. An organic light emitting diode (OLED) display device includes the semiconductor nanoparticles, a semiconductor particle of the semiconductor nanoparticles including: a core including a compound semiconductor; and a shell surrounding the core. The shell includes a metal oxide (and/or metalloid oxide) having a bandgap of about 3.5 eV or more, and having a sum (?E.sub.CB+?E.sub.VB) of a conduction band offset (?E.sub.CB) with the compound semiconductor included in the core and a valence band offset (?E.sub.VB) with the compound semiconductor included in the core of about 3 eV or more.
PHOSPHOR AND LIGHT EMITTING DEVICE
Provided are a phosphor having long-term reliability and high luminance, and a white light emitting device using the phosphor. In a -type SiAlON phosphor (a), the volume median particle size D50 [m] and the average particle size R [m] calculated from a surface area measured by an air permeability method satisfy the following formula (1):
D50/R<1.4Formula (1)
ELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME
The present invention relates to a fluorescent quantum dot-containing electronic device including a protective sheet. The protective sheet includes a multilayer structure (W) including a base (X) and a layer (Y) stacked on the base (X), the layer (Y) contains a reaction product (D) of an aluminum-containing compound (A) and a phosphorus compound (B), and the reaction product (D) has an average particle diameter of 5 to 50 nm.
InP Quantum Dots with GaP and AlP Shells and Methods of Producing the Same
Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
COMBINATION SOLUTION OF COLLOIDAL QUANTUM DOTS AND METHOD FOR MAKING THE SAME
Differing from commercial solution of colloidal quantum dots being often composed of a non-polar organic solvent and a plurality of quantum dots, the present invention discloses a combination solution of colloidal quantum dots comprising a liquid monomer with low glass transition temperature and a plurality of quantum dot units, wherein the quantum dot unit comprises a polar carrier particle, a plurality of quantum dots and an enclosure layer with high glass transition temperature. It is worth explaining that, after applying an aging treatment to the combination solution of colloidal quantum dots and the commercial solution of colloidal quantum dots for 200 minutes, measurement data of UV-VIS spectrophotometer have proved that the combination solution of colloidal quantum dots provided by the present invention is 1.6 times as stable as the commercial solution of colloidal quantum dots.
InP quantum dots with GaP and AlP shells and methods of producing the same
Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.