The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.

The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like M.sub.mAl.sub.xSi.sub.yN.sub.3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.

A sintered phosphor-composite having a high internal quantum efficiency and a high transmittance is provided. The object can be achieved with a sintered phosphor-composite including a nitride phosphor and a fluoride inorganic binder, wherein, in cross-sectional observation, the sintered phosphor-composite includes at least a portion in which voids of not more than 1 μm are present in a number of not more than 700 within a cross-sectional area of 0.046 mm.sup.2, or a portion having a void area fraction of not more than 3% within a cross-sectional area of 0.046 mm.sup.2.

A light source for emitting emitted light having an SPD comprising: (a) a plurality of light emitters including at least one violet solid-state emitter; (b) at least one phosphor; wherein said light emitters and said at least one phosphor being configured such that: at least 25% of the power within the SPD is in the range 390-420 nm, and the emitted light has a chromaticity which is within a Duv distance of less than 5 points from the Planckian locus.

A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.

The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.

A light emitting device includes at least one first light emitting element to emit a first light having a first peak emission wavelength in a range of 370 nm or greater and 415 nm or less, and at least one fluorescent material to convert the first light to a second light having a second peak wavelength in a range of 550 nm or greater and to 780 nm or less. In an emission spectrum of the light emitting device, a ratio of an intensity of the first peak emission wavelength to a maximum intensity of the second peak emission wavelength is in a range of 0.005 to 0.20.

The present invention relates to MASP-3 inhibitory antibodies and compositions comprising such antibodies for use in inhibiting the adverse effects of MASP-3 dependent complement activation.

Provided is a production method of a nitride fluorescent material capable of producing a nitride fluorescent material having a higher emission intensity. The production method is for producing a nitride fluorescent material having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al and N, which includes subjecting a raw material mixture containing elements constituting the composition of the nitride fluorescent material, along with SrF.sub.2 and/or LiF added thereto as a flux, to a heat treatment, wherein the amount of the flux is in a range of 5.0% by mass or more and 15% by mass or less relative to the total amount, 100% by mass of the raw material mixture and the flux.

A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes Sr.sub.xCa.sub.1xAlSiN.sub.3:Eu, wherein x is: 0.8<x1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca lattice sites are replaced by Eu, wherein, in a x-ray structure analysis, the phosphor in orthorhombic description exhibits a reflection (R) having Miller indices 1 2 1, wherein the phosphor has a structure including (Si/Al)N.sub.4 tetrahedra arranged in a 3D network, in which layers in an a-c plane are linked in a b-direction, and wherein pure Sr positions and positions having a mixed Sr/Ca population are intercalated between the network, layer by layer.