Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50 C. to about 130 C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

The ability to upconvert two low energy photons into one high energy photon has potential applications in solar cells, photodetectors and data storage. In this disclosure, CdSe and PbSe semiconductor nanocrystals are combined with molecular emitters (diphenylanthracene and rubrene) to upconvert photons in both the visible and near infrared spectral regions. Absorption of low energy photons by the nanocrystals is followed by energy transfer to the molecular triplet states, which then undergo triplet-triplet annihilation to create high energy singlet states that emit upconverted light. By using conjugated organic ligands on the nanocrystals to form an energy cascade, the upconversion process can be enhanced by up to three orders of magnitude. The use of different combinations of nanocrystals and emitters shows that this platform has great flexibility in the choice of both excitation and emission wavelengths.

The present application provides a ligand-modified quantum dot material, a method of fabricating a liquid crystal display panel, and a liquid crystal display panel. The ligand-modified quantum dot material of the present application can occur a polymerization with the ligand-modified quantum dot material under ultraviolet irradiation to form a polymer, while the polymer deposits on a substrate to form a polymer film, which can replace the PI alignment film, so that an alignment process of liquid crystal is simplified, and a cost is economized; simultaneously, display quality of a liquid crystal display panel can be improved by the quantum dots anchored in the polymer film. The method of fabricating the liquid crystal display panel of the present application eliminates the fabricating process of the PI alignment film, the method has simple process and low cost, and a liquid crystal display panel obtained thereby has better display quality. The liquid crystal display panel of the present application utilizes the polymer film, which is obtained by polymerizing the ligand-modified quantum dot material and a polymerizable monomer, to replace the PI alignment film, so as to greatly enhance quality of the panel, and to have a low fabricating cost.

Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50 C. to about 130 C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

A method for producing a quantum dot that includes synthesizing a quantum dot represented by AgInE.sub.2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

A radiation sensing material is disclosed. The radiation sensing material is represented by the following formula (I):

(M1.sub.8-2aM2.sub.a)(M.sub.14-(4b/3)M.sub.b)O.sub.24(X.sub.2-dcdX.sub.n.sup.c?):M formula (I)

Further is disclosed a device and uses of the radiation sensing material represented by the formula (I).

A ceramic lithium indium diselenide or like radiation detector device formed as a pressed material that exhibits scintillation properties substantially identical to a corresponding single crystal growth radiation detector device, exhibiting the intrinsic property of the chemical compound, with an acceptable decrease in light output, but at a markedly lower cost due to the time savings associated with pressing versus single crystal growth.

Tellurium compound nanoparticles, including: an element M.sup.1 where M.sup.1 is at least one element selected from Cu, Ag, and Au; an element M.sup.2 where M.sup.2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M.sup.3 where M.sup.3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.

A method of synthesis of two-dimensional (2D) nanoparticles comprises combining a first nanoparticle precursor and a second nanoparticle precursor in one or more solvents to form a solution, followed by heating the solution to a first temperature for a first time period, then subsequently heating the solution to a second temperature for a second time period, wherein the second temperature is higher than the first temperature, to effect the conversion of the nanoparticle precursors into 2D nanoparticles. In one embodiment, the first nanoparticle precursor is a metal-amine complex and the second nanoparticle precursor is a slow-releasing chalcogen source.

A novel near-IR emitting cationic silver chalcogenide quantum dot with a mixed coating wherein the coating comprises of at least 2 different types of materials and is capable of luminescence at the desired near IR bandwidth at wavelengths of 800-850 nm. The quantum dot is fabricated via an advantageous single-step, homogeneous, aqueous method at a low temperature resulting a near IR emitting semiconductor quantum dot with high Quantum Yield, high transfection with low toxicity. The quantum dots may be used in medical imaging, tumor detection, drug delivery and labeling as well as in quantum dot sensitized solar cells.