Patent classifications
C11D1/18
CLEANSING COMPOSITION
Provided is a detergent composition that contains (A) 2-17.5 mass % of an anionic surfactant, (B) 1-17.5 mass % of an amphoteric surfactant, (C) 2.5-17 mass % of a hydrophilic non-ionic surfactant and (D) 0.2-5 mass % of an oily component. However, the detergent composition does not contain substantial amounts of fatty acid monoglycerol esters and fatty acid monoalkyl monoglyceryl ethers having alkyl groups or acyl groups having 9 or more carbon atoms. The detergent composition does not contain substantial amounts of fatty acid diglycerol esters or fatty acid monoalkyl diglyceryl ethers which have alkyl groups or acyl groups having 8 or more carbon atoms.
SULFATE-FREE FORMULATIONS
An aqueous personal care composition comprising: one or more amphoacetates; one or more glutamate surfactants selected from sodium lauroyl glutamate, dipotassium cocoyl glutamate, potassium lauryl/myristoyl glutamate and combinations thereof; and cocamide MIPA; wherein the composition is free of sulfates and ethoxylates.
Concentrated Detergent or Cleaning Agent
Disclosed is a detergent preparation that contains, based on the total weight thereof, a) 20 to 50 wt. % of a mixture of alkanolamine-C8-18-alkylbenzene sulfonate and sodium-C8-18-alkylbenzene sulfonate; b) 20 to 40 wt. % non-ionic surfactant; and c) 0.2 to 12 wt. % enzyme preparation.
Also disclosed are detergent supply forms containing this detergent preparation, method for cleaning textiles using this detergent preparation and method for the production thereof.
Concentrated Detergent or Cleaning Agent
Disclosed is a detergent preparation that contains, based on the total weight thereof, a) 20 to 50 wt. % of a mixture of alkanolamine-C8-18-alkylbenzene sulfonate and sodium-C8-18-alkylbenzene sulfonate; b) 20 to 40 wt. % non-ionic surfactant; and c) 0.2 to 12 wt. % enzyme preparation.
Also disclosed are detergent supply forms containing this detergent preparation, method for cleaning textiles using this detergent preparation and method for the production thereof.
Cleaning solution and cleaning method
An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.
Cleaning solution and cleaning method
An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.
LAUNDRY DETERGENT COMPOSITIONS
The need for liquid laundry detergent compositions which provide good removal of both hydrophobic and hydrophilic stains, while also comprising reduced levels of 1,4-dioxane, or even no 1,4-dioxane, is met by formulating the laundry detergent composition with a combination of sulfonate anionic surfactant and an alkyl alkanolamide sulfate anionic surfactant.
LAUNDRY DETERGENT COMPOSITIONS
The need for liquid laundry detergent compositions which provide good removal of both hydrophobic and hydrophilic stains, while also comprising reduced levels of 1,4-dioxane, or even no 1,4-dioxane, is met by formulating the laundry detergent composition with a combination of sulfonate anionic surfactant and an alkyl alkanolamide sulfate anionic surfactant.
Solid detergent composition
A solid detergent composition comprising a cationic polymer (A) and an anionic surfactant (B), wherein the cationic polymer (A) and the anionic surfactant (B) satisfy the following requirement I and requirement II: Requirement I: a transmittance of a mixed liquid 1 obtained by mixing the cationic polymer (A), the anionic surfactant (B), and water at a weight ratio of 0.5:12:87.5 to light having a wavelength of 655 nm (optical path length: 1 cm, 25 C.) is 95% or more, and Requirement II: a transmittance of a diluted liquid obtained by mixing the mixed liquid 1 and water at a weight ratio of 1:4 to light having a wavelength of 655 nm (optical path length: 1 cm, 25 C.) is 90% or less.
Solid detergent composition
A solid detergent composition comprising a cationic polymer (A) and an anionic surfactant (B), wherein the cationic polymer (A) and the anionic surfactant (B) satisfy the following requirement I and requirement II: Requirement I: a transmittance of a mixed liquid 1 obtained by mixing the cationic polymer (A), the anionic surfactant (B), and water at a weight ratio of 0.5:12:87.5 to light having a wavelength of 655 nm (optical path length: 1 cm, 25 C.) is 95% or more, and Requirement II: a transmittance of a diluted liquid obtained by mixing the mixed liquid 1 and water at a weight ratio of 1:4 to light having a wavelength of 655 nm (optical path length: 1 cm, 25 C.) is 90% or less.