A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %. ##STR00001##

A cleaning composition including a preservative formulation having hydroxy acetophenone and a phospholipid complex is disclosed. The cleaning composition can be loaded on a cleaning wipe and used for personal care. The hydroxyacetophenone provides a preservative booster to the preservative system for the cleaning composition containing a phospholipid complex, such as cocamidopropyl PG-dimonium chloride phosphate, which has sonic limited independent preservation activity, depending on the level in the final formulation.

Disclosed herein is an alkaline composition for cleaning a substrate including a structure of copper or copper alloy and a structure including cobalt or cobalt alloy, the composition including: (a) 0.0001 to 0.2% by weight of a cobalt corrosion inhibitor selected from a surfactant

##STR00001## (b) 0.0001 to 0.5% by weight of a copper corrosion inhibitor selected from benzotriazole, 5-chloro benzotriazole, 4-methyl benzotriazole; 5-methyl benzotriazole; tetrahydro benzotriazole; and methyl-benzotriazole-1-yl)-methyl-imino-bis-ethanol; (c) 0.05 to 1% by weight of a C.sub.2 to C.sub.7 monoamino alkanol; and (d) a solvent;
where the solvent consists essentially of water.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25 C.