Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

Polishing compositions are disclosed for simultaneously removing particles from a surface that has been polished using a CMP slurry comprising a polishing rate accelerator and removing a pad stain from a polishing pad that has been contacted with a CMP slurry comprising a polishing rate accelerator.

Cleaning compositions for post-CMP cleaning of semiconductor surfaces, comprise one or more reducing agents, a particle removal agent, a surfactant, and a base. When one or more reducing agents yields a standard reduction potential of less than 1.224 V, the cleaning composition of the present disclosure is able to remove a MnO.sub.2 pad stain from a polishing pad and reduce defects on a polished surface (by removing particles).

Described herein are aqueous cleaning compositions comprises a combination of polyalkylenimine and an acid, a surfactant, and a solvent mixture. Methods of making and using the same are also described.

A solution for treating contact lens is provided. The solution includes about 0.01-1.0 parts by weight (pbw) of a polymer having phosphorylcholine groups, about 0.01-1 pbw of an inorganic salt, and about 100 pbw of water. The polymer has a number-average molecular weight of about 4,000 to about 1,000,000 daltons and has a structure of formula (I):

##STR00001##

wherein, in formula (I), m is a positive integer, n is zero or a positive integer, and R is C.sub.2-C.sub.12 alkyl group or C.sub.2-C.sub.12 hydroxyalkyl group. When n is a positive integer, m/n is greater than 1.

The present disclosure relates to a cleaning composition for removing an oxide including one selected from an organic acid, an inorganic acid, and any combination thereof; one selected from an organic salt, an inorganic salt, and any combination thereof; an oxidizing agent; a surfactant; and water, and a method of cleaning using the cleaning composition.

There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

A shaped detergent product comprising 10 to 100 wt. % of a first solid phase and 0 to 90 wt. % of one or more other phases, wherein the first solid phase comprises: a) non-crystalline chiral aminopolycarboxylate; b) non-crystalline organic acid other than component a); c) at most 30 wt. % water; d) at most 50 wt. % of non-crystalline water-soluble component other than component a) or component b); e) at most 20 wt. % of homogeneously dispersed crystalline material; wherein the combination of the components a), b) and c) is present in the first solid phase in a concentration of at least 35 wt. % of the total weight of the solid phase; and wherein components a), b) and c) are present in the solid phase in a ratio of from 25 to 88 parts by weight of free acid equivalent of component a): from 10 to 60 parts by weight of free acid equivalent of component b): from 2 to 30 parts by weight of component c); and wherein the shaped detergent product comprises at least 0.5 wt. % surfactant.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>δ.sub.d>13, 25>δ.sub.p>3, 30>δ.sub.h>4; an acid having an acid dissociation constant pKa: −11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from

##STR00001##

R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O.sub.2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO.sub.2OH, —SO.sub.2SH, —SOH, —SO.sub.2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO.sub.3NH—, and SO.sub.2NH.

Solid rinsing, cleaning and/or sanitizing compositions for various applications are provided. In particular, solid compositions include a complex of urea and an acid having desirable storage stability previously unavailable in solid urea/acid compositions. Stable solid compositions are disclosed and methods of making the same to overcome conventional limitations associated with with forming kinetically and thermodynamically stable solids that utilize urea/acid compositions.