Disclosed herein is a composition for removing post-etch residues in the presence of a layer comprising silicon and a dielectric layer including a silicon oxide, the composition including: (a) 0.005 to 0.3 % by weight HF; (b) 0.01 to 1 % by weight of an ammonium fluoride of formula NR.sup.E.sub.4F, where R.sup.E is H or a C.sub.1 to C.sub.4 alkyl group; (c) 5 to 30 % by weight of an organic solvent selected from the group consisting of a sulfoxide and a sulfone; (d) 70 % by weight or more water, and (e) optionally 0.01 to 1 % by weight of an ammonium compound selected from the group consisting of ammonia and a C.sub.4 to C.sub.20 quaternized aliphatic ammonium.

Methods and compositions for cleaning industrial equipment (e.g. biofuel or corn ethanol plant equipment) in place at high temperatures using acidic methane sulfonic acid compositions having a low pH.

Linen treatment compositions and linen processes are disclosed which help to prevent iron deposition from wash water, and/or redeposition after iron containing stain (such as blood) removal by alkaline detergents. The linen treatment composition is a combination of a hydroxycarboxylic acid and an acid source, which may be organic or inorganic. The invention provides for effective iron control in a phosphorus-free formula that is also free of toxic or hazardous chemicals and includes sustainable, environmentally friendly ingredients, while still providing effective iron control.

A formulation having at least one of a product stabilization solvent, a sequestrant or chelating agent, and an alkalinity agent capable of use in a cleaning operation at a reduced temperature. Optionally, the formulation may additionally comprise any one or more of a degreaser emulsifier solvent, a surfactant, a hydrotrope, a stabilizer, a biocide, and a buffer. An additive formulation of the invention, as defined herein, comprises these stated types of compounds and is combined with an alkalinity agent at the time of the formulations use in a reduced temperature dairy equipment cleaning operation. A full formulation of the invention, as defined herein, additionally comprises an alkalinity agent in addition to the other named compounds. In many cases, the full formulations are used in a reduced temperature dairy equipment cleaning operation without being combined with an additional alkalinity agent. The reduced temperature of the dairy equipment cleaning operation using the formulation of the invention may be less than about 50° C. or, alternatively, less than about 40° C.

Described herein is an aqueous composition for removing cryolitic deposits from plants or parts of plants which serve for the conversion treatment of metal surfaces, said composition including a) at least one mineral acid, and b) at least one dicarboxylic acid of the formula HOOC—(CH.sub.2).sub.x—COOH, where x is 0 to 3 and no borate-containing compounds have been added to the composition. Also described herein is a corresponding method for removing cryolitic deposits.

Compositions for rapidly dissolving mineral deposits on the surface of an apparatus, particularly a food or beverage-handling clean-in-place (CIP) apparatus, and methods of using the same are provided. In particular, the compositions are effective in removing magnesium phosphate deposits and comprise at least two mineral acids, with one of the mineral acids being nitric acid, and at least one nonionic surfactant.

A cleaning composition that comprises a nonionic sorbitan alkyl polyglucoside crosspolymer, at least one functionalized alkyl polyglucoside, a water conditioning agent, water, and an acid source.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

The present invention relates to a method of cleaning pretreatment of ferrous components that have been joined by welding, in which residues from the welding operation are removed from the surface of the component and, in this way, subsequent wet-chemical conversion treatments are enabled so as to produce defect-free coatings. For cleaning pretreatment, the component is contacted with an aqueous sulfuric acid etchant which comprises amino alcohols, ethoxylates and/or propoxylates of fatty alcohols having 6 to 12 carbon atoms in the alcohol and iron ions, and is effective without the presence of fluorides. In a further aspect, the present invention encompasses an aqueous acidic etchant for cleaning pretreatment of ferrous components that have been joined by welding.

The present invention relates to borate and phosphate containing compositions, especially eye care compositions, achieving physiologically compatible pH and tonicity as well as good bacteriostatic properties. Methods of using the compositions of the present invention are also disclosed.