The present disclosure relates to a process solution for polymer processing, containing a polar aprotic solvent, a fluorine-based compound, and a sulfur-containing compound. The process solution for polymer processing may have excellent storage stability and minimize damage to the metal layer while improving an ability to remove the adhesive polymer remaining on a circuit surface of a semiconductor wafer.

The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

Some aspects of the disclosure relate to compositions for releasing a material clog. In some examples, the compositions include one or more release agents, such as a silicone material, one or more thickening agents, and one or more complexing agents. In certain aspects, the disclosure relates to non-hazardous compositions for releasing a material clog, for example compositions with limited amounts of or no amounts of caustic and/or alkaline material. In other aspects, the disclosure relates to methods for releasing a material clog by contacting a release composition and a clog for a contact time period, and/or pretreating plumbing component surfaces or plumbing component standing water with a release composition before formation and/or deposition of a clog.