A hydrofluoroolefin compound is represented by the following general formula (I): where R.sub.F1 is a hydrogen atom or CH.sub.3, and (iii) R.sub.F1 is a linear or branched perfluorinated alkyl group having 1 to 10 carbon atoms and optionally including one or more catenated heteroatoms; and R.sub.F2 is a fluorine atom or a linear or branched perfluorinated alkyl group having 1 to 8 carbon atoms and optionally including one or more catenated heteroatoms; with the proviso that when RF2 is a fluorine atom, then RF1 includes at least 2 carbon atoms; or (iv) R.sub.F1 and R.sub.F2 are bonded together to form a ring structure having 4 to 8 carbon atoms and optionally including one or more catenated heteroatoms. ##STR00001##

A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

A process of treating a fabric with a fabric treatment composition, where the composition is provided to a receiving vessel such as the dispenser drawer of an automatic washing machine, the composition including a fabric conditioning active (FCA), where the composition may be dispensed from a container, for example a pressurized container, as a foam. Related compositions, including compositions in pressurized containers. Related uses, for example, to provide an anti-wrinkle benefit to a fabric.

An object of the present invention is to provide a solvent and a detergent that have excellent basic properties as solvents or detergents, such as solubility, and that have a boiling point, flammability, toxicity, GWP, and ODP that are all within preferable ranges. To achieve the above object, the present invention provides a solvent composition or detergent composition comprising a hydrochlorofluoropropene represented by the formula: CX.sub.3CXCX.sub.2, wherein each X is the same or different and is F or Cl, at least one X is F, and at least three X are Cl; the hydrochlorofluoropropene having an atmospheric pressure boiling point of 50 C. or higher.

An improved composition and method of use is provided which is suitable for treating live animal growth facility, meat processing facilities and food processing facilities. The composition comprises 34-99.35 wt % water; 0.1 to 3 wt % hydrophobizing agents; up to 5 wt % antistatic agents; 0.05 to 3 wt % wetting agents; and 0.5 to 55 wt % film forming agent. The composition is applied to surfaces and allowed to dry.

A detergent composition for dry cleaning is disclosed. The detergent composition for dry cleaning includes a) 5 to 10% by weight of a fluorinated (fluoro-based) solvent, b) 1 to 2% by weight of a cleaning booster, c) 5 to 10% by weight of an anti-shrinkage agent, d) 40 to 50% by weight of a water-soluble solvent, and e) 30 to 40% by weight of water.

Provided is a composition for cleaning semiconductor substrates, having high removal rate of tungsten oxide with high Ti/W etching selectivity.

The composition for cleaning semiconductor substrates, comprising an oxidizing agent (A), a fluorine compound (B), a metallic tungsten corrosion inhibiter (C), and a tungsten oxide etching accelerator (D), wherein the addition ratio of the oxidizing agent (A) is from 0.0001 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; the addition ratio of the fluorine compound (B) is from 0.005 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; and the addition ratio of the metallic tungsten corrosion inhibiter (C) is from 0.0001 to 5% by mass relative to the total mass of the composition for cleaning semiconductor substrates.

A detergent in the form of an envelope including a water-repellent component such that, even when wet laundry is stored, the shape stability of the detergent in the form of the envelope can be maintained.

[Problem] To provide a substrate treating solution. [Means for Solution] The substrate treating solution comprises a polymer (A) and a solvent (B), wherein the solvent (B) comprises water (B-1); the polymer (A) comprises an acidic polymer (A-1) having a pKa (H.sub.2O) of ?10 to 8 or a basic polymer (A-2) whose conjugate acid has a pKa (H.sub.2O) of 6 to 14; the content of the polymer (A) is 0.5 to 15 mass % based on the total mass of the substrate treating solution; the content of the solvent (B) is 70 to 99.5 mass % based on the total mass of the substrate treating solution; and the content of water (B-1) is 80 to 100 mass % based on the total mass of the solvent (B).

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.