Patent classifications
C11D7/263
Cleaning compositions for removing residues on semiconductor substrates
This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one water soluble organic solvent; 3) at least one metal-containing additive; 4) at least one cyclic amine, and 5) water.
PERFUME PARTICLES FOR LAUNDRY COMPOSITION
A composition comprising a plurality of particles, wherein said particles comprise: 40 to 95 w.t. % polyethylene glycol, wherein the polyethylene glycol has a weight average molecular weight from 4000 to 12000; 0.1 to 50 w.t. % anhydrous saccharide comprising one to ten monosaccharide units; and 0.1 to 20 w.t. % perfume materials.
Solvent composition, cleaning method, coating film-forming composition, and method of forming a coating film
There are provided a solvent composition containing tDCE, which does not exert an adverse effect on the global environment, has high solubility and incombustibility, and can maintain initial incombustibility even in use accompanied by a phase change, a cleaning method using the solvent composition, a coating film-forming composition including the solvent composition, and a method of forming a homogeneous coating film using the coating film-forming composition. A solvent composition includes: tDCE; at least one HFE (A) selected from HFE-347pc-f, HFE-365mf-c, and HFE-467sc-f; and at least one HFC (X) selected from cHFC-447, and HFC-76-13sf, in which a ratio of tDCE with respect to a total amount of tDCE, HFE (A), and HFC (X) is 65 to 80 mass %, a ratio of HFE (A) with respect to the total amount is 5 to 25 mass %, and a ratio of HFC (X) with respect to the total amount is 5 to 25 mass %.
CLEANING FLUID COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME
A cleaning fluid composition, a method of manufacture of the fluid composition, and a method of use thereof are provided. The fluid composition comprises 10% to 50% by weight of an alcohol based on the total weight of the fluid composition, 2% to 40% by weight of a co-solvent based on the total weight of the fluid composition, and at least 20% by weight of water based on the total weight of the fluid composition. The co-solvent is miscible with water, the fluid composition is substantially free of ethylene glycol and methanol, and the fluid composition has a viscosity less than or equal to 45 cP at 25 degrees Celsius and a freezing point less than 25 degrees Celsius.
COMPOSITIONS AND METHODS FOR CLEANING AUTOMOTIVE SURFACES
An automotive surface is cleaned by applying an effective amount of a cleaning composition comprising a) at least one hydrocarbon solvent in an amount from about 3 weight percent to about 20 weight percent of the composition, b) at least one thickener/rheology modifier in an amount from about 0.01 weight percent to about 3 weight percent, c) at least one silicone fluid has a viscosity ranging from about 500 to about 20,000 centistokes at 25 C., present in an amount from about 0.1 weight percent to about 3 weight percent, d) at least one wetting agent in an amount from about 0.001 to about 2%, e) at least one hydrophobic additive in an amount from about 0.1 to about 3%, and f) water in an amount from about 60 weight percent to about 85 weight percent to the automotive surface with an application implement.
COMPOSITIONS AND USES OF CIS-1,1,1,4,4,4-HEXAFLUORO-2-BUTENE
This invention relates to compositions, methods and systems having utility in numerous applications, and in particular, uses for compositions containing the compound cis-1,1,1,4,4,4-hexafluoro-2-butene (Z-HFO-1336mzzm), which has the following structure:
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Cleaning formulations for removing residues on semiconductor substrates
This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
COMPOSITION FOR PERFORMING CLEANING AFTER CHEMICAL/ MECHANICAL POLISHING
Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
REMOVER REAGENT FOR CURED SILICONE SEALANT AND METHOD USING SAME
The present disclosure provides a formula of a remover reagent for a cured silicone sealant and a method using the same. The remover reagent is prepared from an acid catalyst and a solvent each having a high boiling point and a high flash point. The acid catalyst is benzenesulfonic acid or alkylbenzenesulfonic acid. The solvent is mineral oil and/or silicone oil. The cured silicone sealant is first soaked with the remover reagent for 30 to 120 min, and then baked at a high temperature of 80 to 120? C. for 10 min or above into debris or powder, whereby the cured silicone sealant with a thickness of 10 mm or above can be removed. Moreover, the remover reagent has the advantages of readily available raw materials, high safety, environmentally friendliness, convenient preparation and good sealant removal effect, and thus, has good application prospects.
Post CMP cleaning compositions
In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO.sub.2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.