A composition including hydrogen peroxide is provided, which can be used for semiconductor device manufacturing and which exhibits an excellent storage stability and has a reduced effect of defects on a semiconductor substrate. Further, a method is provided for producing the composition including hydrogen peroxide, and a composition reservoir for storing the composition. The composition includes hydrogen peroxide, an acid, and an Fe component, in which the content of the Fe component is 10.sup.−5 to 10.sup.2 in terms of mass ratio with respect to the content of the acid.

An alkaline cleaning composition is provided. The alkaline cleaning composition includes an alkaline compound, 5% to 40% by weight of propylene glycol monomethyl ether, 10% to 30% by weight of water, and a polar solvent. Wherein, the polar solvent includes acetals, glycol ethers, pyrrolidones, or a combination thereof, and the alkaline cleaning composition is free of benzenesulfonic acid.

The invention relates to compositions for removing nail polish comprising a solvent and a high load of colorant, preferably between 0.5 wt % and 5.0 wt %. Preferably, the composition has an absorption peak in a range between 460 nm and 600 nm, and a normalized extinction of at least 0.5 for at least one wavelength in the range when measured in an optically transparent solvent via spectrophotometer and across 1 cm path length in a ratio of 1:8 composition to optically transparent solvent. Methods of removing nail polish are also provided.

The present invention is directed to the use 4,8,11-dodecatrienal to impart a clean aroma impression to a composition. The present invention is further directed to compositions comprising 4,8,11-dodecatrienal and at least one aroma chemical as well as to compositions comprising 4,8,11-dodecatrienal and at least one further component selected from the group consisting of aroma chemicals, surfactants, oil components, anti-oxidants, deodorant-active agents and solvents, wherein the composition does not comprise 1,5,9-cyclododecatriene.

A method is provided for removing a residue from a surface. The method includes steps of applying a cleaning medium to the surface containing the residue. The cleaning medium comprises up to 100 wt. % of at least a solvent. Allowing the cleaning medium to be in contact with the residue for at least 5 seconds to swell/dissolve the residue for removing the residue from the surface. At least 50 wt. % of the residue and the cleaning medium are removed from the surface by wiping the surface with a shear force. The residue contains a sulfonated polymer having an ion exchange capacity (IEC) of greater than 0.5 meq/g. The sulfonated polymer can kill >90% of microbes coming in contact with the sulfonated polymer in less than 30 min.

The present application provides binary azeotrope or azeotrope-like compositions comprising perfluoroheptene and an additional component, wherein the additional component is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the perfluoroheptene. Methods of using the compositions provided herein in cleaning and carrier fluid applications are also provided.

The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I): ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

The present disclosure relates to a process solution composition for polymer treatment comprising: a fluorine compound; a ketone-based solvent; and a polar aprotic solvent, wherein the ketone-based solvent is one or more selected from the group consisting of compounds represented by Chemical Formula 1 or Chemical Formula 2, and has an effect capable of preventing damage to various types of metals while improving the power of removing an adhesive polymer remaining on the wafer circuit surface in a semiconductor manufacturing process.

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

The present disclosure relates to a thinner composition for removing a resist and a processing method of a semiconductor substrate using the thinner composition. Particularly, the thinner composition includes (a) propylene glycol monoalkyl ether, (b) propylene glycol monoalkyl ether acetate, (c) cyclohexanone, and (d) cyclopentanone. In addition, the processing method of a semiconductor substrate includes applying a resist composition on a semiconductor substrate and removing the applied resist composition using the thinner composition of the present invention.