The present application provides quaternary azeotrope or azeotrope-like compositions comprising trans-dichloroethylene and three or more additional components. Methods of using the compositions provided herein in cleaning, defluxing, deposition, and carrier fluid applications are also provided.

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

Provided is a cleaning agent composition for use in an adhesion process for applying an adhesive to a surface of a first member subjected to a dry treatment without a primer, and adhering a second member to the surface of the first member. The cleaning agent comprises a compound (A) having a (meth)acryloyl group and a liquid (B) having a boiling point of not higher than 200° C.

The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

The present invention discloses a photoresist-removing solution comprising of an N-containing compound and an organic substance in a mass ratio of 1:(0.5-150). The N-containing compound includes at least one of the followings: tetraalkylammonium hydroxide, ammonia, liquid ammonia, and a mixture of ammonia and water; wherein the tetraalkylammonium hydroxide has the general formula (I):

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 is an alkyl with 1 to 4 carbons, respectively. The organic substance is an organic substance having at least one electron-withdrawing functional group. The present invention mixes a specific kind of N-containing compound and a specific kind of organic substance in a certain ratio, and preferably adds a certain amount of water, so that the removal liquid in the present application has an extremely excellent photoresist-removing effect.

The present application provides binary azeotrope or azeotrope-like compositions comprising perfluoroheptene and an additional component, wherein the additional component is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the perfluoroheptene. Methods of using the compositions provided herein in cleaning and carrier fluid applications are also provided.

The compositions include a methylated siloxane liquid and a solvent comprising at least one of a ketone or ester each having up to six carbon atoms, a halogenated alkane having up to two carbon atoms, tetrachloroethene, 1-chloro-4-trifluoromethyl benzene, or ethane. The compositions can also include hydrocarbon solvent comprising at least one of toluene, xylene, or a saturated hydrocarbon represented by formula C.sub.xH.sub.2x+y, wherein x is from 5 to 8, and wherein y is 0 or 2 and/or propellant. The method can include applying the composition to a brake system component to clean the brake system component. The method can also include applying a composition including hexamethyldisiloxane to a brake system component to clean the brake system component.

The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

A composition includes methyl acetate, dimethyl carbonate, acetone, or a combination thereof, dimethyl sulfoxide, methyl glyoxal, propylene carbonate, gamma butyrolactone, ethylene carbonate, 2-chloro-1-propanol, or a combination thereof, and optionally thiophene, 1,3-dioxolane, thioacetic acid, or a combination thereof. The respective amounts of each solvent are further described herein, and the total amounts of methyl acetate, dimethyl carbonate, acetone, dimethyl sulfoxide, methyl glyoxal, propylene carbonate, thiophene, 1,3-dioxolane, and thioacetic acid sum to at least 90 volume percent of the total volume of the composition. The composition can be particularly useful for removal of a coating from a surface. Accordingly, a method of removing a coating from a surface is also disclosed.