Patent classifications
C11D7/264
METHOD OF CLEANING A SEMICONDUCTOR CHIP AND APPARATUS FOR PERFORMING THE SAME
A method of and apparatus for cleaning a semiconductor chip, the method including applying a first polar composition to a protection layer on a surface of at least one semiconductor chip to remove a particle from the surface of the at least one semiconductor chip and suspend the particle in the first polar composition; and applying a second polar composition, having a surface tension that is lower than that of the first polar composition, to a central portion of the applied first polar composition to push the first polar composition and the particle toward an outskirt of the at least one semiconductor chip.
NAIL POLISH REMOVING COMPOSITION
The invention relates to compositions for removing nail polish comprising a solvent and a high load of colorant, preferably between 0.5 wt % and 5.0 wt %. Preferably, the composition has an absorption peak in a range between 460 nm and 600 nm, and a normalized extinction of at least 0.5 for at least one wavelength in the range when measured in an optically transparent solvent via spectrophotometer and across 1 cm path length in a ratio of 1:8 composition to optically transparent solvent. Methods of removing nail polish are also provided.
CLEANING FLUID COMPOSITIONS AND METHODS OF MAKING AND USING THE SAME
A cleaning fluid composition, a method of manufacture of the fluid composition, and a method of use thereof are provided. The fluid composition comprises 10% to 50% by weight of an alcohol based on the total weight of the fluid composition, 2% to 40% by weight of a co-solvent based on the total weight of the fluid composition, and at least 20% by weight of water based on the total weight of the fluid composition. The co-solvent is miscible with water, the fluid composition is substantially free of ethylene glycol and methanol, and the fluid composition has a viscosity less than or equal to 45 cP at 25 degrees Celsius and a freezing point less than 25 degrees Celsius.
Drying high aspect ratio features
Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
COMPOSITIONS AND USES OF CIS-1,1,1,4,4,4-HEXAFLUORO-2-BUTENE
This invention relates to compositions, methods and systems having utility in numerous applications, and in particular, uses for compositions containing the compound cis-1,1,1,4,4,4-hexafluoro-2-butene (Z-HFO-1336mzzm), which has the following structure:
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Cleaning formulations for removing residues on semiconductor substrates
This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
CLEANING SOLUTION
The present invention provides cleaning solutions for removing ink, coating, varnish, adhesive, etc. residue from printing equipment. The cleaning solutions of the present invention comprise one or more solvents, preferably selected from acetoacetates, alcohols, glycol ethers, glycol esters, terpenes, and water, and are preferably free of surfactants. The cleaning solutions of the invention have a relative evaporation time (RET) of less than 60 seconds, and a ratio of the RET to the radius of the sphere of solubility of the resin in the ink to be removed of less than 6.
Cleaning Agent Composition
Provided is a cleaning agent composition for use in an adhesion process for applying an adhesive to a surface of a first member subjected to a dry treatment without a primer, and adhering a second member to the surface of the first member. The cleaning agent comprises a compound (A) having a (meth)acryloyl group and a liquid (B) having a boiling point of not higher than 200 C.
SILOXANE COMPOSITIONS AND CLEANING METHOD USING THE SAME
The compositions include a methylated siloxane liquid and a solvent comprising at least one of a ketone or ester each having up to six carbon atoms, a halogenated alkane having up to two carbon atoms, tetrachloroethene, 1-chloro-4-trifluoromethyl benzene, or ethane. The compositions can also include hydrocarbon solvent comprising at least one of toluene, xylene, or a saturated hydrocarbon represented by formula C.sub.xH.sub.2x+y, wherein x is from 5 to 8, and wherein y is 0 or 2 and/or propellant. The method can include applying the composition to a brake system component to clean the brake system component. The method can also include applying a composition including hexamethyldisiloxane to a brake system component to clean the brake system component.
COMPOSITION FOR SEMICONDUCTOR PROCESSING AND PROCESSING METHOD
A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by M.sub.A [mass %] and the content of the (B) component is indicated by M.sub.B [mass %], M.sub.A/M.sub.B is 1.0?10.sup.2 to 1.0?10.sup.4.
R.sub.2N(OH)(1)
R.sub.2NH(2) (In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms.)