Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.

A fluorine-free cleaning agent is a water-based cleaning agent. The fluorine-free cleaning agent comprises of water, organic solvent and amine compound, wherein the mass of the organic solvent is 15-85% of the mass of the fluorine-free cleaning agent; and the mass of the amine compound is 5-50% of the mass of the fluorine-free cleaning agent. The fluorine-free cleaning agent further comprises of one or more of corrosion inhibitor, acid compound and alcohol compound. By means of a synergistic effect of the specific amine compound and one or more of corrosion inhibitor, acid and alcohol, the fluorine-free cleaning agent provided in the present disclosure showed good cleaning capability even without fluoride by comparing with the prior art.

A composition includes a first solvent selected from methyl acetate, dimethyl carbonate, acetone, or a combination thereof, a second solvent selected from thiophene, 1,3-dioxolane, thioacetic acid, or a combination thereof, and, optionally, a third solvent selected from dimethyl sulfoxide, methyl glyoxal, propylene carbonate, gamma butyrolactone, ethylene carbonate, 2-chloro-1-propanol, methanol, ethanol, ethylene glycol, propylene glycol, 1-propanol, 2-propanol, or a combination thereof. The respective amounts of each solvent are further described herein, and the total amounts of the first solvent, the second solvent, and the third solvent sum to at least 90 volume percent of the total volume of the composition. The composition can be particularly useful for removal of a coating from a surface. Accordingly, a method of removing a coating from a surface is also disclosed.

A cleaning solution for temporary adhesive for substrates contains: tetrabutylammonium fluoride; dimethyl sulfoxide; and a liquid compound having a solubility parameter of 8.0 or more and 10.0 or less and having a heteroatom. The tetrabutylammonium fluoride is preferably contained at a content of 1 mass % or more and 15 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound. The dimethyl sulfoxide is preferably contained at a content of 5 mass % or more and 30 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound.

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.

Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates, are provided. A method is presented which uses a minimum amount of solid form concentrate that is diluted into water, introduced into a manufacturing tool and heated, applied to said substrate for a sufficient time to allow penetration and removal of an organic substance, and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive variety most commonly used in the manufacture of a flat panel display (FPD) and other electronic substrates.

This invention relates to compositions, methods and systems having utility in numerous applications, and in particular, uses for compositions containing the compound cis-1,1,1,4,4,4-hexafluoro-2-butene (Z-HFO-1336mzzm), which has the following structure:

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