C11D7/267

BLEACH ACTIVATOR HAVING A CATIONIC GROUP AND WASHING OR CLEANING AGENT CONTAINING SAME

The present invention relates to compounds which form, under perhydrolysis conditions, certain cationic organic peracids, to the use of said compounds for activating peroxygen compounds in the context of bleaching stains when washing textiles and cleaning hard surfaces, and to washing and cleaning agents that contain said compounds.

PROCESS SOLUTION COMPOSITION FOR POLYMER TREATMENT
20220298366 · 2022-09-22 ·

The present disclosure relates to a process solution composition for polymer treatment comprising: a fluorine compound; a ketone-based solvent; and a polar aprotic solvent, wherein the ketone-based solvent is one or more selected from the group consisting of compounds represented by Chemical Formula 1 or Chemical Formula 2, and has an effect capable of preventing damage to various types of metals while improving the power of removing an adhesive polymer remaining on the wafer circuit surface in a semiconductor manufacturing process.

Post CMP Cleaning Compositions
20220106542 · 2022-04-07 · ·

In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO.sub.2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.

CONTACT LENS SOLUTIONS AND KITS
20210317385 · 2021-10-14 ·

The present disclosure relates to contact lens solution comprising cyclodextrin, ophthalmic solutions comprising cy-clodextrin for treating disorders or conditions associated with wearing of contact lenses, methods of treating such disorders or conditions using the ophthalmic cyclodextrin solutions, and kits and combination products thereof.

Non-amine post-CMP compositions and method of use
11127587 · 2021-09-21 · ·

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

Preservative composition for wet wipes

A wiping composition and a wiping product containing the composition are disclosed. The wiping composition contains a combination of an antimicrobial agent with a preservative enhancing agent that not only provides antiseptic properties when applied to an adjacent surface, but also is well suited to preserving the substrate that is used to apply the composition. In particular, the composition has been unexpectedly found to inhibit or destroy bacteria, particularly Burkholderia cepacia, even when the active ingredients are used at extremely low levels.

CLEANING LIQUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER

The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R.sup.1, R.sup.2, and R.sup.3 each have a definition same as the definition described in the description,

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Composition for TiN hard mask removal and etch residue cleaning

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

COMPOSITIONS AND METHODS FOR CLEANING URETHANE MOLDS
20210040421 · 2021-02-11 ·

Compositions and methods for cleaning surfaces, such as for removing residues or other coatings from molds and other industrial parts, such compositions comprising, for example, a first solvent comprising a pyrrolidone such as 2-pyrrolidone, 1-(2-hydroxyethyl)-2-pyrrolidone, or mixture thereof; and a second solvent selected from the group consisting of an imidazole (such as 1,2-dimethylimidizole), an alkylene glycol ether (such as ethylene glycol monobutyl ether or diethylene glycol monobutyl ether, a terpene (such as d-limonene), and mixtures thereof. In various embodiments, such methods are for removing residues from molds used in forming polyurethane parts, wherein residues comprise polyurethane, urethane reactants, and mold release agents. The compositions may be substantially free of 1-methyl-2-pyrrolidone and of 1-ethyl-2-pyrrolidone.

Composition for removing silicone resins and method of thinning substrate by using the same

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R).sub.4N.sup.+F.sup., wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.