The present invention relates to compounds which form, under perhydrolysis conditions, certain cationic organic peracids, to the use of said compounds for activating peroxygen compounds in the context of bleaching stains when washing textiles and cleaning hard surfaces, and to washing and cleaning agents that contain said compounds.

The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa.Math.s or less at 20° C. and a pH of 9.0-14.

Provided is a composition which has an excellent affinity with the surface of an adhesive agent and can achieve a high etching rate. The composition according to one embodiment comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and, as an aprotic solvent, (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and (B) a dipropylene glycol dimethyl ether, wherein (B) the dipropylene glycol dimethyl ether has the percentage of a structural isomer represented by formula (1) of at least 50 mass % with respect to the total amount of (B) the dipropylene glycol dimethyl ether.

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The present invention relates to a cleaning liquid on a silicon oxide film and/or a silicon nitride film, and the cleaning liquid contains (i) at least one compound selected from the group consisting of a compound represented by the formula (1), a compound represented by formula (2), a compound represented by formula (3), and a compound represented by the formula (4); and (ii) a reducing agent;

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in the above formulas, R.sub.1 to R.sub.12 and n are the same as the definitions described in the description.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

The present disclosure relates to a process solution composition for polymer treatment comprising: a fluorine compound; a ketone-based solvent; and a polar aprotic solvent, wherein the ketone-based solvent is one or more selected from the group consisting of compounds represented by Chemical Formula 1 or Chemical Formula 2, and has an effect capable of preventing damage to various types of metals while improving the power of removing an adhesive polymer remaining on the wafer circuit surface in a semiconductor manufacturing process.

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 200° F.) but also shows enhanced cleaning at ambient temperatures.

The present invention relates to a method, a system, and a kit of parts for cleaning a surface contaminated with a hazardous drug or a hazardous drug related product, which involves cleaning in succession with a quaternary ammonium solution followed by an isopropyl alcohol solution.