This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

The present invention is in the field of machine dishwashing compositions. More particularly, it relates to machine dishwashing compositions comprising a phosphonate and polycarboxylate comprising acrylic acid monomers. The invention also relates to a method of washing kitchenware in a machine dishwasher with a machine dishwashing composition comprising a phosphonate and a polycarboxylate comprising acrylic acid monomers and a process for making said composition.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

##STR00001##

A cleaning liquid for cleaning a substrate having a first metal atom-containing layer that contains ruthenium and a second metal atom-containing layer that contains a metal atom other than ruthenium, both of the layers contacting each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer is exposed on a surface. The cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, and at least one amine other than the hydrazine compound and a quaternary hydroxide. In General Formula (a1), R.sup.1 and R.sup.2 represent an organic group including no carbonyl group or a hydrogen atom

##STR00001##

This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.