The present invention addresses the problem of providing a kit for a cleaning agent, which is used for the purpose of preparing a cleaning agent that maintains, even after long-term storage, adequate impurity removal performance from the surface of a semiconductor substrate that has been subjected to a CMP process. The present invention also addresses the problem of providing a method for preparing the above-described cleaning agent. A kit for a cleaning agent according to the present invention is a kit for preparing a cleaning agent which is used for cleaning of a semiconductor substrate that has been subjected to a CMP process, and which has a pH of from 7.5 to 13.0. This kit for a cleaning agent comprises a first liquid that is acidic and contains a compound represented by formula (1) and a second liquid that is alkaline and contains a basic compound; and an acidic compound is contained in at least one of the first liquid and the second liquid.

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A description is given of compositions comprising a) one or more substances selected from the group consisting of hydrogen peroxide and hydrogen peroxide donor substances, b) water, c) one or more polymers having thickening properties and d) one or more substances selected from the group consisting of hydroxypyridones and salts thereof. The compositions are notable more particularly for their advantageous shelf lives.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R.sup.1, R.sup.2, and R.sup.3 each have a definition same as the definition described in the description,

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The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.

The present invention relates to co-granules comprising an enzyme and a bleach catalyst and to their use in bleach-containing granular automatic dishwash (ADW) detergents.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

The invention relates to a purge composition comprising a polymer formulation which is tacky and suitable to cross-link and/or cure to become less tacky, at least 50% of solids of the polymer formulation comprising a polysiloxane, polyurethane, acrylate resin, epoxy resin, melamine resin, formaldehyde resin, or a mixture of two or more of any of these; and a curing catalyst suitable to cure the polymer formulation, wherein the composition is suitable to cross-link and/or cure at within 0.1 to 120 minutes at a temperature in a range of from 0 to 450° C. within a device into which the composition is injected. The invention also relates to a method of cleaning a material processing device.