The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.

There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which an anion content of the nitrogen-containing aromatic compound at 25 C. is 5 ppm or more and 30 ppm or less; a method for processing a substrate; and a method for manufacturing a semiconductor.

There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which a mass ratio of a nonionic component of the nitrogen-containing aromatic compound to a total amount of ammonia and an ammonium ion at 35 C. is more than 0.5 and less than 1; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.

A solvent composition has an oxygenated solvent and a siloxane solvent. In one embodiment, the oxygenated solvent is propylene glycol methyl ether and the siloxane solvent is hexamethyldisiloxane or octamethyltrisiloxane. In another embodiment, the solvent composition is an azeotrope of propylene glycol n-butyl ether and decamethyltetrasiloxane. The siloxane solvent can be used in any situation where one desires to remove a silicone deposit, e.g., conformal coatings, adhesives, sealants, greases, heat transfer fluids, paints, oils, etc.

Cleaning fluids include at least 2 fluid components. The first fluid component is a chlorinated hydrofluoroolefin, a hydrochlorofluoroolefin, or a mixture of hydrochlorofluoroolefins. The second fluid component includes at least one of a hydrofluorothioether, a perfluorinated olefin with at least 6 carbon atoms, a hydrofluorolefin with at least 6 carbon atoms, a perfluorinated olefin mixture where the perfluorinated olefins have at least 6 carbon atoms, or a hydrofluorolefin mixture where the hydrofluorolefins have at least 6 carbon atoms.

According to one embodiment, there is provided a cleaning agent. The cleaning agent includes an azole-based compound having a group including at least one selected from the group consisting of a glycidyl group, a hydrolyzable silyl group, and an amino group.

A system and method for removing organic materials from a surface of a substrate are provided, where the organic materials can include photoresist, temporary bonding materials, adhesives, fluxes, and their respective residues. In the system and method, the substrate is immersed in a first fluid in an immersion station. The substrate is transported from the immersion station to a process chamber, where the substrate is sprayed via a high-velocity spray nozzle with a second fluid in the process chamber. The first fluid and the second fluid is incompatible with stainless steel, and the organic materials are removed from the surface of the substrate via the immersion of the substrate in the first fluid and the spraying of the substrate via the second fluid.

An object is to provide a hydrofluoroolefin-based or hydrochlorofluoroolefin-based azeotropic or azeotropic-like composition. The azeotropic or azeotropic-like composition contains trans-1-chloro-3,3,3-trifluoropropene and 1-chloro-1,3,3,3-tetrafluoropropene. In the azeotropic or azeotropic-like composition, 1-chloro-1,3,3,3-tetrafluoropropene exists in an effective amount to form an azeotropic or azeotropic-like mixture with trans-1-chloro-3,3,3-trifluoropropene.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.12 to 10.sup.4.

The present disclosure relates to a cleaning composition and a method for removing residual polymer film bonding materials on a carrier after mechanical debonding or laser debonding using the same, wherein the cleaning composition at least includes component (A) alkali metal hydroxide (weight percentage concentration: 5%-30%), component (B) polar aprotic solvent (weight percentage concentration: 5%-50%), component (C) co-solvent (weight percentage concentration: 5%-60%) and component (D) water.