The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L.sup.1 and L.sup.2 represents a C2 to C4 alkyl group, and L.sup.3 represents O or S) in an amount of 80 mass % or more.

L.sup.1-L.sup.3-L.sup.2(L)

A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

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The present application provides stabilized compositions (e.g., stabilized heat transfer fluids) comprising methyl perfluoroheptene for use, for example, in refrigeration and heat transfer applications. The stabilized compositions of the present invention are useful in methods for producing cooling and heating, methods for replacing refrigerants and refrigeration, air conditioning, heat pump apparatuses, and as solvents or dewatering agents.

A Low-VOC, water-based cleaner containing Baypure CX 100/34 or EDTA Versene 100, Glycol Ether DPNP, or glycol ether EB and DB, Acetone, Acetic Acid, and fragrance. The VOC content of this composition is selectable to be 3.0% or 0% (zero).

A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.

A composition which is particularly effective for removing paint or varnish from wood concrete or metal surfaces comprising synergistic mixed solvents-based compositions with Improved efficiency of performance and environmental safety. The mixed solvent compositions are made from about 10-90% by weight of each polar solvent selected from the group consisting of (pentanoic acid, 5-(dimethylamino)-4-methyl-5-oxo-methyl ester; propylene carbonate, N,N-dimethyl imidazolidinone, dimethyl sulfoxide, dimethyl acetamide, gamma butyrolactone, benzyl alcohol, and mixtures thereof and an activator, ethyl ethoxy propionate, and an aqueous system additive. Methods for use of the composition are also disclosed.

Provided are a composition for removing a photoresist and a method for removing a photoresist using the same. According to the method, a high-dose ion implanted photoresist may be effectively removed without damage such as etching or oxidation of a semiconductor substrate.

An alkaline cleaning composition is provided. The alkaline cleaning composition includes an alkaline compound, 5% to 40% by weight of propylene glycol monomethyl ether, 10% to 30% by weight of water, and a polar solvent. Wherein, the polar solvent includes acetals, glycol ethers, pyrrolidones, or a combination thereof, and the alkaline cleaning composition is free of benzenesulfonic acid.

A cleaning solution for temporary adhesive for substrates contains: tetrabutylammonium fluoride; dimethyl sulfoxide; and a liquid compound having a solubility parameter of 8.0 or more and 10.0 or less and having a heteroatom. The tetrabutylammonium fluoride is preferably contained at a content of 1 mass % or more and 15 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound. The dimethyl sulfoxide is preferably contained at a content of 5 mass % or more and 30 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound.