Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of at least one of dimethyl sulfoxide (DMSO) and N-formyl morpholine, and (B) a second component consisting of at least one of N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, N,N-dimethyl acetoacetamide and N-methyl--caprolactam.

Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of a sulfoxide, e.g., DMSO; (B) a second component consisting of a glycol ether, e.g., ethylene glycol monobutyl ether; and (C) a third component consisting of at least one of N-formyl morpholine, N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, triethyl phosphate, N,N-dimethyl acetamide; N,N-diethyl acetamide, N,N-diethyl propionamide, N-methyl acetamide, N-methyl propionamide, N-ethyl acetamide, and N-ethyl propionamide.

A method of removing from a surface a solid sulfur-containing impurity composition comprising a sulfur-containing compound, the method comprising the step of dissolving sulfur-containing compound in the sulfur-containing impurity composition with a nitrile compound to form a treated sulfur-containing impurity composition comprising less than 99.5 wt % sulfur-containing compound, based on the total weight of the treated sulfur-containing impurity composition.

A composition effective for removing contaminates from an electronic device either as a concentrated material or when diluted with water. The composition designed for effective removal of undesirable contaminates from an electronic device, including but not limited to, solder flux and polymeric residues. The composition contains butylpyrrolidone and an alkali and has a pH of greater than 7.1 and a pKa less than 12. The composition may contain additional optional solvents and additives to enhance cleaning of articles or to impart other properties to the composition. The composition can be contacted with a surface to be cleaned in a number of ways and under a number of conditions depending on the manufacturing or processing variables present.

Provided is a cleaning solvent composition that comprises a cis-1-chloro-3,3,3-trifluoropropene solvent and an additive, wherein the additive contains at least one type of compound selected from the group consisting of nitroalkanes and epoxides.

The present invention provides a composition and a method of using the composition to decontaminate surfaces or objects that have opioid contamination, and in particular to decontaminate fentanyls on surfaces using an opioid-active reagent and an opioid-effective solubilizing agent. Preferably, the opioid-active reagent is chlorine dioxide.

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.

The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60? C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.